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Publications (12)7.08 Total impact

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    ABSTRACT: V-band monolithic power amplifiers have been developed and demonstrate state-of-the-art performance. For a single-stage MMIC amplifier employing a 200- mu m pseudomorphic HEMT, 151.4 mW (757 Mw/mm) output power with 26.4% power-added efficiency at 60 GHz is achieved. Maximum power-added efficiency of 30.6% at 130-mW output power is also obtained. A three-stage MMIC amplifier utilizing the same devices demonstrated 80-mW output power, 20.5% power-added efficiency, and 17-dB associated gain at 57 GHz. The linear gain of the amplifier was 21.5 dB.< >
    IEEE Microwave and Guided Wave Letters 11/1992;
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    ABSTRACT: Recent advances in pseudomorphic high-electron-mobility transistor (PMHEMT) monolithic microwave integrated circuit (MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. The development of V-band PMHEMT/MMIC components including power amplifiers and phase shifters is described. For the single-stage MMIC power amplifier employing a 200 micron PMHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 1.8 dB associated gain and 26.4 percent power-added efficiency at 60 GHz. A two-stage MMIC amplifier utilizing the same devices demonstrated small-signal gain as high as 15 dB at 58 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz was measured.
    09/1992;
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    ABSTRACT: The development of a W -band (75-110 GHz) monolithic receiver, culminating in a three-chip multifunctional monolithic microwave integrated circuit (MMIC) receiver front-end, is described. The heart of the receiver is a four-channel multiplexer, with each channel possessing its own single balanced mixer and low-noise IF amplifier, all integrated onto a single GaAs chip. Two dual-channel monolithic Gunn oscillators with the drive level and spectral parity to meet system requirements have been developed. The key to the development of the monolithic front-end has been to ensure process compatibility between individual components and the careful partitioning of the chip architecture
    Proceedings of the IEEE 04/1991; · 6.91 Impact Factor
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    ABSTRACT: Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.
    Proc SPIE 02/1991;
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    ABSTRACT: A novel approach for deembedding is presented which utilizes known physical transmission line lengths instead of electrical characteristics for calibration standards. This allows one to perform millimeter-wave deembedding for waveguide-based vector network analyzers. Theoretical formulation of ETRL and experimental characterization for V -band microstrip lines are shown. Important design guidelines, and selection of valid root choice of the formulation are described
    Microwave Symposium Digest, 1990., IEEE MTT-S International; 06/1990
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    ABSTRACT: Millimeter-wave monolithic integrated circuits with state-of-the-art performance have been developed for a W-band (75 to 110 GHz) channelized monolithic receiver. The receiver is composed of one four-channel multiplexer, four balanced mixers, four IF amplifiers and four local oscillators. These components monolithically were integrated into three distinct chips.
    Microwave Journal 02/1990; · 0.17 Impact Factor
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    ABSTRACT: The successful development of monolithic millimeter-wave (30-110 GHz) single function components is discussed. This is a necessary step in the evolution of a high-performance single multifunction (transmit/receive) module chip for phased arrays. Examples of Ka-, V-, and W-band monolithic components and their performance are shown. It is noted that future development depends on the identification and coordination of multidisciplinary technologies
    01/1990;
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    ABSTRACT: Several monolithic integrated circuits with state-of-the-art performances have been successfully developed for a W -band (75- to 110-GHz) channelized monolithic receiver. The receiver comprises one four-channel multiplexer, four balanced mixers, four IF (intermediate frequency) amplifiers, and four Gunn local oscillators. All will be monolithically integrated into only three chips. The authors report on the design, fabrication, and performance of each monolithic component and describe the complete W -band four-channel receiver integration. State-of-the-art performance includes 5-dB insertion loss and 25-dB rejection for the W -band, four-channel monolithic multiplexer, less than 10-dB conversion loss over a 13-GHz bandwidth for the W -band ion-implanted mixers, and 13 dBm output at 63 GHz and 7.7 dBm at 96 GHz for the monolithic Gunn oscillators
    Microwave Symposium Digest, 1989., IEEE MTT-S International; 07/1989
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    ABSTRACT: State-of-the-art V -band monolithic digital and analog phase shifters using FETs and varactor diodes have been developed. At 60 GHz, the single-bit FET and varactor branchline phase shifters achieved 129° phase shift with less than 1.4-dB insertion loss and 54° phase shift with less than 1.3-dB insertion loss, respectively. Four cascaded FET branchline phase shifters achieved 360° phase shift in 22.5° steps with insertion loss of 4.5 to 7.5 dB. Two cascaded varactor branchline phase shifters achieved 160° continuous phase shift with insertion loss of 3.5 to 8.5 dB
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE; 12/1988
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    ABSTRACT: Components for a W -band monolithic subharmoniously pumped receiver have been developed. A conversion loss of 8.8 dB has been achieved for a monolithic W -band subharmonically pumped mixer with a Q -band local oscillator (LO) drive of 10 dBm. A monolithic GaAs Gunn local oscillator with more than 20-mW output power at 46 GHz has been developed. It is noted that this work is the first step toward the integration of a complete W -band monolithic receiver on a single GaAs chip
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE; 12/1988
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    ABSTRACT: A monolithic V -band GaAs FET transmit-receive switch is described. The insertion loss for the switch-on path is less than 1.5 dB across a 2-GHz bandwidth (59 to 61 GHz) and is less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz). The isolation during switch-off is greater than 25 dB across a 2-GHz bandwidth (59 to 61 GHz) and is greater than 23 dB across an 8-GHz bandwidth (56 to 64 GHz). The monolithic FET switch circuit demonstrated a switching speed of less than 1 ns and radio-frequency power handling capability in excess of 450 mW
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988; 06/1988
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    ABSTRACT: Recent advances in millimeter-wave monolithic integrated circuits (MICs) are presented. Performances of several MICs are summarized. These include a Gunn oscillator at 68 GHz with an output power of 1 mW, a W-band balanced mixer with a minimum conversion loss of 6.0 dB and a W-band PIN switch with an isolation greater than 11 dB over a 6 GHz bandwidth.
    Proc SPIE 01/1987;