E.Yu. Kondrat'eva

Publications (4)4.12 Total impact

• Article: Single transverse mode operation of long wavelength (~1.3 μm) InAsGaAs quantum dot laser

  M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop'ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.J. Alferov, N.N. Ledentsov, D. Bimberg
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  ABSTRACT: Single transverse mode continuous wave (CW) operation up to 110 mW has been achieved for narrow stripe ridge waveguide laser diodes based on InAsGaAs quantum dots emitting near 1.31 μm. A total output power of 330 mW has been obtained. The maximal modal gain of the ground state transition was measured to be 12 cm^-1
  Electronics Letters 12/1999; · 0.96 Impact Factor
• Article: Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

  A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mikhrin, N.A. Maleev, E.Yu. Kondrat'eva, D.A. Livshits, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Z.I. Alferov, D. Bimberg
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  ABSTRACT: Continuous-wave operation near 1.3 /spl mu/m or a diode laser based on self-organized quantum dots (QD's) on a GaAs substrate is demonstrated. Multiple stacking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm/sup 2/) and high output power (2.7 W) at 17/spl deg/C heatsink temperature. It is thus confirmed that QD lasers of this kind are potential candidates to substitute InP-based lasers in optical fiber systems.
  IEEE Photonics Technology Letters 12/1999; · 2.19 Impact Factor
• Article: 1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

  Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop'ev, A.R. Kovsh, N.A. Maleev, M.V. Maximov, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
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  ABSTRACT: Low threshold current density (J_th=65 A/cm²) operation near 1.3 μm at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.
  Electronics Letters 06/1999; · 0.96 Impact Factor
• Conference Proceeding: Ground and excited state lasing near 1.3-μm from self-assembledquantum dots on GaAs substrates

  A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, E.Yu. Kondrat'eva, Yu.M. Shernyakov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg
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  ABSTRACT: Self-assembled In(Ga)As quantum dots (QDs) formed in a GaAs matrix usually emit in the 1-1.2 μm wavelength range. It is strongly desired to extend the emission range of QD structures grown on GaAs substrates up to 1.3 μm to fit the transparency window of optical fibers. In the present work we study the room temperature characteristics of the broad area (200 μm) diode lasers based on triple-stacked InAs QDs covered with 5.5 nm In_0.13Ga_0.87As QW. QD planes were separated by 30 nm GaAs spacers
  Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings; 02/1999