D. E. Aspnes

Publications (6)5.3 Total impact

• Article: Electrodynamics of surface-enhanced Raman scattering

  E. J. Adles, S. Franzen, D. E. Aspnes
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  ABSTRACT: We examine SERS from two perspectives: as a phenomenon described by the Laplace Equation (the electrostatic or Rayleigh limit) and by the Helmholtz Equation (electrodynamic or Mie limit). We formulate the problem in terms of the scalar potential, which simplifies calculations without introducing approximations. Because scattering is not usually calculated this way, we provide the necessary theoretical justification showing that the scalar-potential description is complete. Additional simplifications result from treating the scatterer as a point charge q instead of a dipole. This allows us to determine the consequences of including the longitudinal (Coulomb) interaction between q and a passive resonator. This interaction suppresses the mathematical singularities that lead to the unphysical resonant infinities in first and second enhancements. It also modifies the effective restoring-force constant of a resonant denominator, which permits us to explore the possibility of dual resonance through a molecular pathway. We apply the formalism to spherical inclusions of radius a for q located at polar and equatorial positions. For small a, of the order of 1 nm or less, the low-l multipole terms are important. For the more relevant case of radii of the order of 10 nm and larger, the q-sphere interaction can be approximated by a model where q interacts with its image charge for a dielectric plane, and the singularity shifts in a discrete manner from \epsilon(\omega)=-2 to \epsilon(\omega)=-1. These results are supported by more accurate calculations taking retardation into account, although the use of only one spherical-harmonic term does not fully represent the difference between forward- and backscattering.
  09/2011;
• Source

  Available from: ArXiv

  Article: Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

  B. Gokce, D. E. Aspnes, G. Lucovsky, K. Gundogdu
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  ABSTRACT: It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.
  Applied Physics Letters 01/2011; 98(2):021904-021904-3. · 3.84 Impact Factor
• Source

  Available from: arxiv.org

  Article: Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si

  B. Gokce, E. J. Adles, D. E. Aspnes, K. Gundogdu
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  ABSTRACT: Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly necessary to mention the impact that these techniques have had on almost every field of science. However, the bonds between atoms are critical for determining the overall structure. The dynamics of these bonds have been difficult to quantify. Here, we combine second-harmonic generation and the bond-charge model of nonlinear optics5, 6 to probe, in real time, the dynamics of bond-by-bond chemical changes during the oxidation of H-terminated (111)Si, a surface that has been well characterized by static methods. We thus demonstrate that our approach provides new information about this exhaustively studied system. For example, oxidation is activated by a surprisingly small applied macroscopic strain, and exhibits anisotropic kinetics with one of the three equivalent back-bonds of on-axis samples reacting differently from the other two. Anisotropic oxidation kinetics also leads to observed transient changes in bond directions. By comparing results for surfaces strained in different directions, we find that in-plane control of surface chemistry is possible. The use of nonlinear optics as a bond-specific characterization tool is readily adaptable for studying structural and chemical dynamics in many other condensed-matter systems. Comment: 15 pages, 4 figures
  02/2010;
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  Available from: ArXiv

  Article: Chemical-etch-assisted growth of epitaxial zinc oxide

  E. J. Adles, D. E. Aspnes
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  ABSTRACT: We use real-time spectroscopic polarimetric observations of growth and a chemical model derived therefrom, to develop a method of growing dense, two-dimensional zinc oxide epitaxially on sapphire by metalorganic chemical vapor deposition. Particulate zinc oxide formed in the gas phase is used to advantage as the deposition source. Our real-time data provide unequivocal evidence that: a seed layer is required; unwanted fractions of ZnO are deposited; but these fractions can be removed by cycling between brief periods of net deposition and etching. The transition between deposition and etching occurs with zinc precursor concentrations that only differ by 13%. These processes are understood by considering the chemistry involved. Comment: 9 pages, 5 figures
  10/2009;
• Source

  Available from: ericadles.com

  Article: The anisotropic bond model of nonlinear optics

  E. J. Adles, D. E. Aspnes
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  ABSTRACT: The anisotropic-bond model (ABM) of nonlinear optics (NLO) provides a simple means of calculating NLO properties of materials by factoring the problem into four parts: first, determination of the local field at a bond-charge site; second, solution of the anharmonic force equation of the bond charge; third, calculation of the radiation from the charge; and fourth, superposition of the radiation from all charges. Because this factorization is impossible in linear optics, this is one of the few cases where a nonlinear problem is simpler than its linear equivalent. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  Physica Status Solidi (A) Applications and Materials 03/2008; 205(4):728 - 731. · 1.46 Impact Factor
• Source

  Available from: ArXiv

  Article: Application of the anisotropic bond model to second-harmonic generation from amorphous media

  E. J. Adles, D. E. Aspnes
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  ABSTRACT: As a step toward analyzing second-harmonic generation (SHG) from crystalline Si nanospheres in glass, we develop an anisotropic bond model (ABM) that expresses SHG in terms of physically meaningful parameters and provides a detailed understanding of the basic physics of SHG on the atomic scale. Nonlinear-optical (NLO) responses are calculated classically via the four fundamental steps of optics: evaluate the local field at a given bond site, solve the force equation for the acceleration of the charge, calculate the resulting radiation, then superpose the radiation from all charges. The ABM goes beyond previous bond models by including the complete set of underlying contributions: retardation (RD), spatial-dispersion (SD), and magnetic (MG) effects, in addition to the anharmonic restoring force acting on the bond charge. We apply the ABM to obtain analytic expressions for SHG from amorphous materials under Gaussian-beam excitation. These materials represent an interesting test case not only because they are ubiquitous but also because the anharmonic-force contribution that dominates the SHG response of crystalline materials and ordered interfaces vanishes by symmetry. Using the paraxial-ray approximation, we reduce the results to the isotropic case in two limits, that where the linear restoring force dominates (glasses), and that where it is absent (metals). Both forward- and backscattering geometries are discussed. Estimated signal strengths and conversion efficiencies for fused silica appear to be in general agreement with data, where available. Predictions are made that allow additional critical tests of these results.
  01/2008;