Chelyadinskii A.R

Publications (2)0 Total impact

• Article: Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon

  Jadan M, Chelyadinskii A.R, Yavid V.Yu
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  ABSTRACT: Problem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in two shapes. Results: At low saturation Si atoms diffuse as isolated atoms with a low diffusion coefficient (~1012 cm2 sec1 at 900°C). At high supersaturation interstitial atoms diffused as Si-Si pairs, which had lower activation energy of migration and higher diffusion coefficients (~107 cm2 sec1). Conclusion: The high diffusivity pairs were formed when two Si atoms hit in the same interstice. The atoms were not bound to one another by covalent bond. In a pair atoms were retained by a potential relief of the crystal.
  American Journal of Applied Sciences. 01/2009;
• Article: Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing

  Jadan M, Chelyadinskii A.R, Yavid 2V.Yu
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  ABSTRACT: The process of boron displacement from the nodes into interstitial positions by interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed
  American Journal of Applied Sciences. 01/2005;