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Publications (4)0 Total impact

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    ABSTRACT: The work presented in this paper is concerned with the effects of a positive and of a negative gate bias stress on punch-through insulated gate bipolar transistors (PT-IGBT's). Two selections of PT IGBT's all of the same nominal range were gate biased at their positive and negative maximum gate-to-emitter voltage with drain and emitter short-circuited at 140 °C during 1200 hours. A particular interest was taken in the switching parameters. Experimental results on their evolution under the two types of stress are presented in a quantified way. Then, a qualitative analysis of the effects of the switching times shift, due to the IGBT's ageing, on a PWM inverter operation is presented.
    Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on; 07/2005
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    ABSTRACT: The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a pulse width modulation (PWM) inverter operation is presented
    01/2005;
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    ABSTRACT: In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during 1200 hours at 140 °C with 0.8 VCEmax Collector - Emitter bias (HTRB) and with VGE = −20 V or +20 V Gate Bias (HTGB). The results show the evolution of the static parameters as threshold voltage and on-state voltage drop and of switching parameters. The aim is to constitute a database as complete as possible for the analysis and diagnosis of failure causes related to the switching devices in power conversion systems.
    Microelectronics Reliability. 01/2005;
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    ABSTRACT: The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) stress on punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs). A selection of PT IGBTs and a selection of NPT IGBTs all of the same nominal range were gate biased at their maximum gate-to-emitter voltage with drain and emitter short circuited at 140 °C during 1200 hours. A particular interest was taken in the switching parameters. The turn-on delay time t<sub>don</sub> increases for the PT IGBTs while it decreases for the NPT IGBTs. The switching losses and the rise time increase for the two technologies. The turn-off delay time monotonically decreases for both the PT and NPT IGBTs. The fall time decreases for the PT IGBTs whereas it increases but in a less important way for the other technology. The on state voltage drop increases in both cases and in a more important way for the PT IGBTs. The gale threshold voltage is quiet insensitive to this type of stress for the NPT IGBTs whereas it increases during the first hundred hours of stress and remains unchanged thereafter for the PT IGBTs. The gate leakage current increases strongly for the two technologies while the collector leakage current, such as the threshold voltage, increases to remain constant after some hours of stress for the PT IGBTs.
    Industrial Electronics, 2004 IEEE International Symposium on; 06/2004