C. Pomarede

Publications (2)0 Total impact

• Source

  Available from: njit.edu

  Conference Proceeding: 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

  J.M. Hergenrother, G.D. Wilk, T. Nigam, F.P. Klemens, D. Monroe, P.J. Silverman, T.W. Sorsch, B. Busch, M.L. Green, M.R. Baker, [......], K. Short, K. Steiner, D.A. Muller, P.M. Voyles, J.L. Grazul, E. Shero, M.E. Givens, C. Pomarede, M. Mazanec, C. Werkhoven
  [show abstract] [hide abstract]
  ABSTRACT: We have integrated HfO₂ and Al₂O₃ gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry. These transistors are among the first reported with ALD HfO₂ gate dielectrics, and have HfO₂ target equivalent oxide thicknesses (tEOT's) down to 13 Å. The poly-crystalline HfO₂ films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of J_G ~ 10 ^-7 A/cm² at V_G-V_T,Long = 0.6 V for 15 Å tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO₂ devices with 50 nm gate length L_G exhibit drive currents [normalized by the coded width W_C] of 490 μA/μm for 1 V operation (overdrive V_GS-V_T = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials
  Electron Devices Meeting, 2001. IEDM Technical Digest. International; 02/2001
• Source

  Available from: Chadwin D. Young

  Conference Proceeding: Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

  Yudong Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, JaeEun Lim, B. Foran, F. Shaapur, [......], D. Derro, R. Bergmann, R.W. Murto, A. Hou, H.R. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanez, C. Werkhoven
  [show abstract] [hide abstract]
  ABSTRACT: Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO₂/poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO₂/poly-Si transistors
  Electron Devices Meeting, 2001. IEDM Technical Digest. International; 02/2001