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Publications (2)2.79 Total impact

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    ABSTRACT: A 0.1-μm T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 μm and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f<sub>T</sub> of 154 GHz and a maximum frequency f<sub>max</sub> of 300 GHz. The noise figure for the 160 μm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 μm MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.
    IEEE Electron Device Letters 07/2004; · 2.79 Impact Factor
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    ABSTRACT: A submicron T-gate fabricated using E-beam lithography and thermally reflow process was developed and was applied to the manufacture of the low noise metamorphic high electron-mobility transistors (MHEMTs).The In0.53 Al0.47 As/InGaAs MHEMT uses Inx Al1-x As as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure.The T-gate developed has a gate length of 0.13 µm formed by thermally reflowed technology.The fabricated MHEMT has a saturation drain current of 200 mA/mm and a transconductance of 750 mS/mm at VDS =1.2V.The noise figure for the 160 µm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz.The device demonstrates a cut-off frequency fT of 154 GHz and a maximum frequency fmax of 300 GHz.