Jia Dongyan
University of Science and Technology of China, Hefei, Anhui Sheng, China

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Publications (1)0 Total impact

  • Conference Proceeding: 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials
    Jia Dongyan, Xu Shanjia, Sheng Xinqing
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    ABSTRACT: Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.
    Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on; 02/1999

Institutions

  • 1999
    • University of Science and Technology of China
      • Department of Electronic Engineering and Information Science
      Hefei, Anhui Sheng, China
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