Hongwei Zhou,
Xiaoping Wang,
Bich-Yen Nguyen,
R. Rai,
L. Prabhu,
Jack Jiang,
V. Kaushik,
J. Scheaffer,
M. Zavala,
E. Duda, [......],
D. Theodore,
G. Edwards,
R. Gregory,
R Wang, Hak Yam,
Jimmy Yu,
Huibin Lu,
Zhenghao Chen,
Xubing Lu,
Zhiguo Liu
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ABSTRACT: A promising high k material, lanthanum aluminum oxynitride (LAON), with excellent material and electronic properties is reported. The LAON film has good thermal stability and CMOS process compatibility at 1000 C. The LAON material has a dielectric constant of above 20, bandgap of 6.6 eV. Well-behaved I-V and C-V were obtained for 80 A LAON on silicon.
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on; 01/2004
