Guoping Ru

Publications (3)0 Total impact

• Article: Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions

  Huizhen Wu, Guoping Ru, Yonggang Zhang, Chengguo Jin, Bunji Mizuno, Yulong Jiang, Xinping Qu, Bingzong Li
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  ABSTRACT: Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage (ECV). By comparing ECV results with those of secondary ion mass spectroscopy (SIMS), it is found that the dopant concentration profiles in heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS. However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. The ECV technique is also easy to control and reproduce. The ECV results of ultra-shallow junctions (USJ) formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm, and dopant concentration up to 1021 cm−3. Also, its depth resolution can be as fine as 1 nm. Therefore, it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.
  Frontiers of Electrical and Electronic Engineering in China 12/2007; 3(1):116-119.
• Conference Proceeding: I-V-T studies on ternary silicide Co_1-xNi_xSi₂/n-Si Schottky contacts

  Shiyang Zhu, Guoping Ru, Xinping Qu, R.L. Van Meirhaeghe, S. Forment, Bingzong Li
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  ABSTRACT: Ternary silicide Co_1-xNi_xSi₂/n-Si(100) contacts with different x value were formed by solid phase reaction of Co/Ni bilayer and substrate Si. Their Schottky barrier properties were studied using the current voltage-temperature (I-V-T) measurements range from 100 to 300K. The I-V-T curves show three typical types, which can be related to the barrier height inhomogeneity. A clean trend is found that the barrier height inhomogeneity increases with increasing the annealing temperature. Ni incorporation reduces not only the silicidation temperature, but also the temperature at which the contact becomes inhomogeneity.
  Junction Technology, 2004. IWJT '04. The Fourth International Workshop on; 04/2004
• Article: Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts

  Shiyang Zhu, R.L. Van Meirhaeghe, S. Forment, Guoping Ru, Bingzong Li
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  ABSTRACT: The I–V/C–V characteristics of Ni silicide/n-Si(1 0 0) contacts, which were formed at various annealing temperatures from 350 to 800 °C, were studied in the temperature range from 100 K up to room temperature. The experimental I–V data of the low temperature annealed diodes obey the traditional thermionic emission (TE) model quite well, and the barrier heights are deduced to be approximately 0.62 eV for Ni2Si/Si and 0.67 eV for NiSi/Si diodes respectively. For high temperature annealed samples, the current in the low bias region exceeds significantly that predicted by the TE model. The phenomenon can be attributed to patches with low barrier height embedded in the contact. Using Tung’s pinch-off model, the patch’s properties (the patch size, the number of patches and the local series resistance) are deduced by the deconvolution of the experimental I–V data. Both the patch size and its density increase significantly with increasing the annealing temperature. In other words, high temperature anneal degenerates the Ni silicide/Si Schottky contact.
  Solid-State Electronics.