Publications (2)0 Total impact
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Conference Proceeding: High Resolution Patterning and Simulation on Mo/Si Multilayer for EUV Masks
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ABSTRACT: Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulationĂ‚Â¿s accuracy.Mask and Lithography Conference (EMLC), 2008 24th European; 02/2008 -
Conference Proceeding: Electron beam lithography simulation for the patterning of EUV masks
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ABSTRACT: The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress.Microprocesses and Nanotechnology, 2007 Digest of papers; 12/2007