F. Bendriaa

Publications (4)3.9 Total impact

• Conference Proceeding: Transferrin Electronic Detector for Iron Disease Diagnostics

  A. Girard, F. Bendriaa, O. De Sagazan, M. Harnois, F. Le Bihan, A.C. Salaun, T. Mohammed-Brahim, P. Brissot, O. Loreal
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  ABSTRACT: Field effect transistor (FET) structure with suspended bridge shows the ability to detect proteins with very high sensitivity. This sensor is tested for the transferrin, a specific blood plasma protein, relevant in iron disease diagnostic. This system is based on field effect transistor with a suspended bridge used as a gate electrode. The sensitive layer is made of silicon nitride as in the ISFET (ion sensitive field effect transistor) technology. The surface micro-technology ensures a small height suspended-bridge (0.5 mum) composed of poly-silicon insulated with silicon nitride. To improve sensitivity and to limit biofouling, proteins are selected by antibodies covalently bound to organic layers. The specific charge of the fixed transferrins translates the transistor transfer characteristics. For low concentration, resulting shift is important and confers a good sensitivity to our electronic transducer.
  Sensors, 2006. 5th IEEE Conference on; 11/2006
• Article: Sensing sensibility of surface micromachined suspended polysilicon thin film transistors

  H. Mahfoz-KOTB, A-C Salaün, F Bendriaa, F Le Bihan, T Mohammed-Brahim and J R Morante
  Sensors and Actuators B Chemical 01/2006; 118:243. · 3.90 Impact Factor
• Article: Microtechnologies for the New Millennium 2005

  F. Bendriaa, F. Le Bihan, A. C. Salaun, T. Mohammed-Brahim, O. Bonnaud
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  ABSTRACT: This paper presents a new device for the pH detection. It is based on a suspended polysilicon gate field effect transistor (SGFET). The sensitive layer is made of silicon nitride as for ISFET technology. The suspended bridge, used as gate electrode, is formed with doped polysilicon covered with silicon nitride layers for electrical insulation. The layers are deposited by Low Pressure Chemical Vapor Deposition (LPCVD). Surface micro-technology allows to obtain a small height (0.5μm) suspended-bridge. In this case, the solution penetrates under the gate. The high field effect in the gap between the gate and the channel is enough to change the charges distribution. Very high pH sensitivity, greater than 200 mV/pH, is found with this new structure and it is much higher than the usual Nernstian sensitivity of ISFETs. The device concept, electrical characteristics, and the effect of the thickness of the gap between the bridge and the sensitive layer on the pH sensitivity are discussed in this study.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
  06/2005;
• Source

  Available from: Hafsa Korri-Youssoufi

  Conference Proceeding: DNA detection by suspended gate polysilicon thin film transisitor

  F. Bendriaa, F. Le-Bihan, A.C. Salaun, T. Mohammed-Brahim, C. Tlili, N. Jaffrezic, H. Korri-Youssoufi
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  ABSTRACT: An electronic device, namely suspended gate thin film transistor (SGTFT), for rapid and direct detection of specific DNA sequences with high sensitivity is presented. It is an usual P-type polysilicon TFT where the gate contact is a Si₃N₄/polysilicon/Si ₃N₄ bridge suspended at 0.5 mum above the SiO ₂/Si₃N₄ gate insulator. The high field effect due to the low height of the gap induces high sensitivity of the characteristics to any charge variation in the space between the gate and the channel. Amino-substituted ODN is grafted on silicon nitride surface after glutaraldehyde activation. The presence of this grafted ODN is confirmed by the positive shift, meaning the presence of negative charge, of the SGTFT transfer characteristics. The characteristics do not shift with non complementary DNA target. On the contrary, hybridization with complementary DNA is evidenced by the positive shift as large as 0.35 V with 5nM DNA concentration and an effective volume of 7 times 10^-10 milliliter
  Sensors, 2005 IEEE;