Eriko Hirano

National Cancer Center, Japan, Edo, Tōkyō, Japan

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Publications (5)5.61 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: In order to evaluate the usefulness of a metal oxide-silicon field-effect transistor (MOSFET) detector as a in vivo dosimeter, we performed in vivo dosimetry using the MOSFET detector with an anthropomorphic phantom. We used the RANDO phantom as an anthropomorphic phantom, and dose measurements were carried out in the abdominal, thoracic, and head and neck regions for simple square field sizes of 10 x 10, 5 x 5, and 3 x 3 cm(2) with a 6-MV photon beam. The dose measured by the MOSFET detector was verified by the dose calculations of the superposition (SP) algorithm in the XiO radiotherapy treatment-planning system. In most cases, the measured doses agreed with the results of the SP algorithm within +/-3%. Our results demonstrated the utility of the MOSFET detector for in vivo dosimetry even in the presence of clinical tissue inhomogeneities.
    Radiological Physics and Technology 07/2010; 3(2):104-12.
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    ABSTRACT: We have developed a practical dose verification method for radiotherapy treatment planning systems by using only a Farmer ionization chamber in inhomogeneous phantoms. In particular, we compared experimental dose verifications of multi-layer phantom geometries and laterally inhomogeneous phantom geometries for homogeneous and inhomogenous dose calculations by using the fast-Fourier-transform convolution, fast-superposition, and superposition in the XiO radiotherapy treatment-planning system. We applied the dose verification method to three kernel-based algorithms in various phantom geometries with water-, lung- and bone-equivalent media of different field sizes. These calculations were then compared with experimental measurements by use of the Farmer ionization chamber. The fast-Fourier-transform convolution algorithm overestimated the dose by about 8% in the lung phantom geometry. The superposition algorithm and the fast-superposition algorithm were both accurate to better than 2% when compared to the measurements even for complex geometries. Our dose verification method was able to clarify the differences and equivalences of the three kernel-based algorithms and measurements with use only of commonly available apparatus. This will be generally useful in commissioning of inhomogeneity-correction algorithms in the clinical practice of treatment planning.
    Radiological Physics and Technology 01/2009; 2(1):87-96.
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    ABSTRACT: Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.
    Radiological Physics and Technology 01/2008; 1(1):55-61.
  • Medical Physics 01/2008; 35(6). · 2.91 Impact Factor
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    ABSTRACT: The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, which acts as a point dosimeter, and also its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never been used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton beams. We experimentally evaluated dose reproducibility, linearity, fading effect, beam intensity dependence and angular dependence for the proton beam. Furthermore, the Bragg curve and spread-out Bragg peak were also measured and the linear-energy transfer (LET) dependence of the MOSFET response was investigated. Many characteristics of the MOSFET response for proton beams were the same as those for photon beams reported in previous papers. However, the angular MOSFET responses at 45, 90, 135, 225, 270 and 315 degrees for proton beams were over-responses of about 15%, and moreover the MOSFET response depended strongly on the LET of the proton beam. This study showed that the angular dependence and LET dependence of the MOSFET response must be considered very carefully for quantitative proton dose evaluations.
    Physics in Medicine and Biology 01/2007; 51(23):6077-86. · 2.70 Impact Factor

Publication Stats

22 Citations
5.61 Total Impact Points

Institutions

  • 2008–2010
    • National Cancer Center, Japan
      • Center for Cancer Control and Information Services
      Edo, Tōkyō, Japan
    • Chiba-East National Hospital
      Tiba, Chiba, Japan