Publications (1)0 Total impact
-
Conference Proceeding: Impact of mask alignment on the tunneling field effect transistor (TFET)
[show abstract] [hide abstract]
ABSTRACT: The tunneling field effect transistor (TFET) is a standard CMOS process flow compatible device which shows improved short channel characteristics and lower static power consumption. The device is generated by the p-implant layer overlapping the source extension. A test-structure is proposed to investigate the impact of the alignment of the p-implant mask on the device characteristics.Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on; 05/2005
Top co-authors
Institutions
-
2005
-
Technische Universität München
- Lehrstuhl für Nukleartechnik
München, Bavaria, Germany
-
