C. Davis,
G. Bajor,
J. Butler,
T. Crandell,
J. Delgado,
T. Jung,
Y. Khajeh-Noori, B. Lomenick,
V. Milam,
H. Nicolay,
S. Richmond,
T. Rivoli
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ABSTRACT: A complementary silicon bipolar process has been developed for
high-performance analog applications. The process features
high-frequency PNP and NPN transistors with transition frequencies above
5 GHz and 9 GHz, respectively. The transistors have a double
polysilicon, self-aligned structure which is isolated by using bonded
wafer silicon-on-insulator (SOI) technology and vertical trenches. The
circuit components are interconnected with two levels of metallization.
The UHF-1 process has been used to create several advanced analog
high-frequency integrated circuits in a monolithic form
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992; 11/1992
