Publications (2)1.47 Total impact
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Conference Proceeding: 3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k / metal gate for hybrid orientation technology
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ABSTRACT: MOSFETs were fabricated on both thick and thin epi SiGe films. An ultra thin (~ 1- 2 nm) epi Si cap grown on the SiGe layers serves to separate the Ge from the high k dielectric as well as form a SiO<sub>2</sub> interfacial layer between the SiGe channel and the high k gate dielectric. There is evidence that this cap layer is completely oxidized during the ozone based ALD high k deposition process. Both epitaxial Si as well as SiO<sub>2</sub> based capping layers are reported to improve the interface for pure Ge devices. PMOSFETs were fabricated using a conventional 4 mask step process flow using a deposited field isolation oxide, ALD high k, metal gate electrode and implanted source/drain regions.Device Research Conference, 2007 65th Annual; 07/2007 -
Article: Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors
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ABSTRACT: We demonstrate epitaxially grown high-quality pure germanium (Ge) on bulk silicon (Si) substrates by ultra-high-vacuum chemical vapor deposition (UHVCVD) without involving growth of thick relaxed SiGe buffer layers. The Ge layer is grown on thin compressively strained SiGe layers with rapidly varying Ge mole fraction on Si substrates resulting in several SiGe interfaces between the Si substrate and the pure Ge layer at the surface. The presence of such interfaces between the Si substrate and the Ge layer results in blocking threading dislocation defects, leading to a defect-free pure Ge epitaxial layer on the top. Results from various material characterization techniques on these grown films are shown. In addition, capacitance-voltage (CV) measurements of metal-oxide-semiconductor (MOS) capacitors fabricated on this structure are also presented, showing that the grown structure is ideal for high-mobility metal-oxide-semiconductor field-effect transistor applications.Journal of Electronic Materials 01/2006; 35(8):1607-1612. · 1.47 Impact Factor
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Institutions
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2006
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The University of Texas at Austin
- Department of Chemistry and Biochemistry
Texas City, TX, USA
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