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ABSTRACT: The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
IEEE Transactions on Instrumentation and Measurement 11/2005; · 1.21 Impact Factor
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M. Somerville,
D. Anderson,
H. Berbeco,
J.R. Bourne,
J. Crisman,
D. Dabby,
H. Donis-Keller,
S.S. Holt, S. Kerns,
D.V. Kerns Jr, [......],
J.C. Pratt,
C. Shea,
S. Schiffman,
S. Spence,
L.A. Stein,
J.D. Stolk,
B.D. Storey,
B. Tilley,
B. Vandiver,
Y. Zastavker
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ABSTRACT: In 1997, the F. W. Olin Foundation of New York established the Franklin W. Olin College of Engineering, Needham, MA, with the mission of creating an engineering school for the 21st century. Over the last five years, the college has transformed from an idea to a functioning entity that admitted its first freshman class in fall 2002. This paper describes the broad outlines of the Olin curriculum with some emphasis on the electrical and computer engineering degree. The curriculum incorporates the best practices from many other institutions as well as new ideas and approaches in an attempt to address the future of engineering education.
IEEE Transactions on Education 03/2005; · 1.02 Impact Factor
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ABSTRACT: In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm<sup>2</sup> of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Schottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts.
IEEE Transactions on Power Electronics 02/2005; · 4.65 Impact Factor
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ABSTRACT: Radiation tolerance of CMOS circuits to total dose can be improved
by adjusting the p-substrate voltage to keep the n-channel threshold
voltage above a minimum value. This paper presents a circuit design,
implemented on an IC and on a breadboard, for dynamically adjusting the
substrate voltage. Experimental results clearly show that devices with
threshold voltage stabilization exhibit longer lifetime as compared to
those without the stabilization circuit
IEEE Transactions on Nuclear Science 01/2001; · 1.45 Impact Factor
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ABSTRACT: Barriers to industrial implementation of optical interconnects on
an IC center on the balance between power requirements and speed
improvements over existing metal interconnect systems. This paper
focuses on such comparison based on empirically measured quantum
efficiency and circuit-level projections. Multiple forms of clock
distribution schemes are analyzed to show that the power requirements
for optical interconnect are comparable to those of conventional metal
interconnects. Implementing optical technology on long interconnect
lines will improve the speed performance of ICs. The availability of
such a method will allow design engineers to guide the partitioning of
optical and conventional interconnects within ICs
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International; 02/2000
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S. Kerns,
D. Jiang,
M. de la Bardonnie,
F. Pelanchon,
H. Barnaby,
D.V. Kerns Jr,
R.D. Schrimpf,
B.L. Bhuva,
P. Mialhe,
A. Hoffmann,
J.-P. Charles
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ABSTRACT: The electrical characteristics of silicon light emitting devices are changed in similar ways by X-ray irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.
IEEE Transactions on Nuclear Science 01/2000; · 1.45 Impact Factor
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ABSTRACT: This paper presents the results from analysis and modeling of the
gas sensing performance, current conduction and gas detection
mechanisms, and adsorption effects on device parameters of a
Pt/SnO<sub>x</sub>/diamond-based gas sensor. The sensor is sensitive and
demonstrates high, repeatable, and reproducible reaction. The sensor
response in seconds to small concentrations of O<sub>2</sub>, CO, and H
<sub>2</sub> gases. The current conduction mechanism of the
diamond-based CAIS
(catalyst/adsorptive-oxide/intrinsic-diamond/semiconductor-diamond)
diode was found to be dominated by space charge limited conduction in
the forward bias region and tunneling in the reverse bias region,
distinctively different from silicon based sensors. While gas adsorption
causes a change in the barrier height and tunneling factor, no
significant change was observed in the ideality factor over the
temperature range investigated. The detection mechanism of the sensor is
attributable to the change in occupancy ratio of the oxygen vacancies of
the adsorptive oxide layer upon oxygen exposure, increasing the contact
potential between adsorptive-oxide and intrinsic-diamond
IEEE Transactions on Electron Devices 06/1999; · 2.32 Impact Factor
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ABSTRACT: Light emission from three device types ((1) commercial silicon
JFETs, (2) bipolar transistors, and (3) a custom diode) with p-n
junctions biased in controlled avalanche breakdown, has been measured
over the photon energy range 1.4-3.4 eV, Previously published models are
compared with these data to elucidate the mechanisms responsible for
avalanche light emission in silicon. A multimechanism model fitting
measured spectra and spectra measured by other researchers is presented
and justified. The success of the model indicates that indirect
recombination of electrons and holes is the dominant emission mechanism
below the light intensity peak (~1.8-2.0 eV), that indirect intraband
recombination dominates at intermediate energies up to ~2.3 eV, and that
direct interband recombination between high-field populations of
carriers near k=0 dominates above ~2.3 eV. For junctions with overlayer
passivation, an interference model must be applied to model measured
spectra
IEEE Transactions on Electron Devices 06/1999; · 2.32 Impact Factor
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ABSTRACT: As we rapidly approach the new millennium, technology seems to
advance at a prodigious pace. In addition, electrotechnology seems to
literally permeate the lives of every individual in modern society. One
need only consider the changes that have taken place in the last several
years in both the computer and communication technology arenas,
vis-a-vis the Internet, to see the impact of this advancing tide.
Engineering education must keep pace. However, engineering curricula are
typically squeezed from all sides. Engineering educators find themselves
caught, at the very least, between university core requirements and
pressure to cut the number of hours required for graduation. As a
result, the electrical engineering material for nonmajors is typically
packaged in a single course. If would appear at first blush that in most
colleges both the content and presentation of this material has changed
very little for more than a decade. The EE for nonmajors course thus
appears to be at the crossroads between a somewhat standard presentation
of relatively stagnant material on the one hand and an exploding
electrotechnology on the other. First this describes what is being done
regarding the nonmajors course throughout the engineering community at
the present time. Second it identifies several key problems associated
with reform of this course. And finally, a discussion is presented of
what this community could do with this nonmajor course, within given
realistic limitations
Frontiers in Education Conference, 1999. FIE '99. 29th Annual; 02/1999
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ABSTRACT: The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on; 02/1999
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ABSTRACT: CMOS circuit hardness to total ionizing dose is improved by a
circuit technique that dynamically adjusts well and/or substrate
voltages to maintain constant device threshold voltages. Threshold
voltage excursions below a reference value activate an oscillator
driving a charge pump. Stabilization is demonstrated experimentally.
Techniques for optimizing the circuitry for various CMOS technology
implementations are provided and supported with simulations
IEEE Transactions on Nuclear Science 01/1999; · 1.45 Impact Factor
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ABSTRACT: Sensors capable of reliable detection of hydrogen gas
concentration are designed and fabricated using intrinsic diamond and
doped diamond films in a MIS structure. The performance of the
diamond-based gas sensor in radiation environments has been
characterized by I-V measurements at room temperature. High sensitivity
to hydrogen and extreme hardness to total ionizing radiation doses have
been observed; the minimal change in gas-sensing characteristics at 10
MRAD is demonstrated experimentally. Analysis of the current transport
mechanism, ideality factor and apparent barrier height confirm the
radiation insensitivity of diamond-based MIS hydrogen sensors
IEEE Transactions on Nuclear Science 01/1999; · 1.45 Impact Factor
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ABSTRACT: The author describes the Management of Technology minor program of study at Vanderbilt University (USA) which is designed to provide a student majoring in one of the traditional undergraduate engineering programs the opportunity to gain a working knowledge of the fundamentals of business and engineering management. Vanderbilt University have determined that about half of their students are in some form of management position within five years after graduation, yet little is done in most engineering curricula to address this issue. With consultation from selected industry and academic advisors, they concluded that a strong technical education centered on fundamentals must remain the primary focus of their traditional engineering programs. This is the curriculum that industry expects and recruits, and therefore, it is also what parents and students expect. Nonetheless, they also recognize the growing importance of interdisciplinary activities and the great benefit their students may receive from an understanding of some economic, business, and management principles. The author details how these factors have lead them to the development of a minor program of study in Management of Technology
Frontiers in Education Conference, 1994. Twenty-fourth Annual Conference. Proceedings; 12/1994
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ABSTRACT: Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.< >
IEEE Electron Device Letters 03/1990; · 2.85 Impact Factor
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ABSTRACT: The most appealing technique for contactless testing of the integrated circuit die has been determined to be through the use of optical signals in the visible or infrared region to supply test signals to and from the integrated circuit chip. The generation of light in silicon for the purpose of producing the output optical signal is difficult. Silicon, being an indirect bandgap semiconductor, is a poor material for light emission. The light-emission properties of a reverse biased silicon diode under avalanche breakdown are being investigated. The intensity of this emission is low; however, for the purpose of this technique, the emission strength is only limited by the ability to detect the signal a short distance away, indicating its potential as a suitable light source for contactless testing. Many diode geometries of p-n junctions for light emission have been designed and fabricated on silicon substrates. The design criteria for these studies are to optimize photon emission from the smallest junction area. The processing parameter optimization is aimed at obtaining low breakdown voltages and minimum power dissipation
University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth; 07/1989
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ABSTRACT: Experimental investigations of piezoresistive effects in
thick-film resistors were performed by measuring longitudinal and
transverse gauge factors as a function of applied strain on two
different substrates' thickness. The relative change in resistance of
the thick-film resistors studied was linear, symmetric, reproducible,
and free of measurable hysteresis for strain between 0 and ±1000
microstrain. A gauge factor of approximately twice that previously
reported was obtained. The suitability of this technology for
strain-sensing applications is discussed
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE; 05/1989
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D.V. Kerns Jr
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ABSTRACT: The author reviews the current status of semiconductor
manufacturing education in US universities and identifies some
shortcomings. He describes the development of an initiative in
microelectronic manufacturing engineering curriculum that was recently
implemented at Florida State University. This program utilizes an
interdisciplinary curriculum to address the problems identified by the
author. A workshop with representatives from Semiconductor Research
Corporation (SRC) companies, university leaders and SRC managers was
held to define appropriate curricula. In addition, a comprehensive
independent survey which attempts to assess the current semiconductor
industry needs in education is presented. Finally, the lessons learned,
including specific recommendations of students, faculty, and industry
representatives, are presented
IEEE Transactions on Education 03/1989; · 1.02 Impact Factor
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D.V. Kerns Jr
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ABSTRACT: Enhancements of the peaking current reference with significantly
improved supply voltage and temperature independence are discussed. The
addition of current mirror circuitry forces the peaking source to
operate near its optimum operating range at all times; the optimum bias
conditions for this source differ from those of a previously presented
(K. Fukahari et al. 1979) basic peaking source. A theory for
optimization is developed and practical application of this source,
computer circuit simulations and experimental data are presented
IEEE Journal of Solid-State Circuits 07/1988; · 3.23 Impact Factor
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ABSTRACT: An ITT type FW118 photomultiplier tube biased by using a high-voltage power supply and a resistor chain was found experimentally to have output noise spectra decreasing in magnitude as frequency increases, resembling in shape the 1/ f noise spectrum. This lowering of the noise level as frequency increases was explained in terms of: 1) the shunting effect of the interelectrode impedance and the stray capacitances of the last stage, and 2) the gain fluctuation of the photomultiplier tube caused by the noise voltage developed across each biasing resistor. A method of flattening the noise spectra and improving the frequency response of the tube is also given in this paper.
IEEE Transactions on Electron Devices 05/1973; · 2.32 Impact Factor
