D.V. Kerns Jr

Lamar University, Beaumont, TX, United States

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Publications (17)22.68 Total impact

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    S. Sayil, D.V. Kerns Jr, S.E. Kerns
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    ABSTRACT: The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
    IEEE Transactions on Instrumentation and Measurement 11/2005; · 1.36 Impact Factor
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    ABSTRACT: In 1997, the F. W. Olin Foundation of New York established the Franklin W. Olin College of Engineering, Needham, MA, with the mission of creating an engineering school for the 21st century. Over the last five years, the college has transformed from an idea to a functioning entity that admitted its first freshman class in fall 2002. This paper describes the broad outlines of the Olin curriculum with some emphasis on the electrical and computer engineering degree. The curriculum incorporates the best practices from many other institutions as well as new ideas and approaches in an attempt to address the future of engineering education.
    IEEE Transactions on Education 03/2005; · 0.95 Impact Factor
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    ABSTRACT: In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm<sup>2</sup> of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Schottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts.
    IEEE Transactions on Power Electronics 02/2005; · 4.08 Impact Factor
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    ABSTRACT: Radiation tolerance of CMOS circuits to total dose can be improved by adjusting the p-substrate voltage to keep the n-channel threshold voltage above a minimum value. This paper presents a circuit design, implemented on an IC and on a breadboard, for dynamically adjusting the substrate voltage. Experimental results clearly show that devices with threshold voltage stabilization exhibit longer lifetime as compared to those without the stabilization circuit
    IEEE Transactions on Nuclear Science 01/2001; · 1.22 Impact Factor
  • D. Jiang, B.L. Bhuva, D.V. Kerns Jr, S.E. Kerns
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    ABSTRACT: Barriers to industrial implementation of optical interconnects on an IC center on the balance between power requirements and speed improvements over existing metal interconnect systems. This paper focuses on such comparison based on empirically measured quantum efficiency and circuit-level projections. Multiple forms of clock distribution schemes are analyzed to show that the power requirements for optical interconnect are comparable to those of conventional metal interconnects. Implementing optical technology on long interconnect lines will improve the speed performance of ICs. The availability of such a method will allow design engineers to guide the partitioning of optical and conventional interconnects within ICs
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International; 02/2000
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    ABSTRACT: The electrical characteristics of silicon light emitting devices are changed in similar ways by X-ray irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.
    IEEE Transactions on Nuclear Science 01/2000; · 1.22 Impact Factor
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    ABSTRACT: The evolution of photon emission from the emitter-base junctions of bipolar transistors during electrical aging is monitored for the first time. Both electrical and optical characteristics are analyzed. Local variations of light emission intensity are observed for junctions biased at avalanche breakdown. During aging, regions of emission coalesce into small, bright regions; the total emission for the entire junction remains stable and relatively high. Changes in transistor current gain and breakdown voltage correlate with changes in light emission, and are consistent with a hydrogen migration model
    IEEE Transactions on Electron Devices 07/1999; · 2.06 Impact Factor
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    ABSTRACT: Light emission from three device types ((1) commercial silicon JFETs, (2) bipolar transistors, and (3) a custom diode) with p-n junctions biased in controlled avalanche breakdown, has been measured over the photon energy range 1.4-3.4 eV, Previously published models are compared with these data to elucidate the mechanisms responsible for avalanche light emission in silicon. A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (~1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to ~2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above ~2.3 eV. For junctions with overlayer passivation, an interference model must be applied to model measured spectra
    IEEE Transactions on Electron Devices 06/1999; · 2.06 Impact Factor
  • Y. Gurbuz, W.P. Kang, J.L. Davidson, D.V. Kerns Jr
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    ABSTRACT: This paper presents the results from analysis and modeling of the gas sensing performance, current conduction and gas detection mechanisms, and adsorption effects on device parameters of a Pt/SnO<sub>x</sub>/diamond-based gas sensor. The sensor is sensitive and demonstrates high, repeatable, and reproducible reaction. The sensor response in seconds to small concentrations of O<sub>2</sub>, CO, and H <sub>2</sub> gases. The current conduction mechanism of the diamond-based CAIS (catalyst/adsorptive-oxide/intrinsic-diamond/semiconductor-diamond) diode was found to be dominated by space charge limited conduction in the forward bias region and tunneling in the reverse bias region, distinctively different from silicon based sensors. While gas adsorption causes a change in the barrier height and tunneling factor, no significant change was observed in the ideality factor over the temperature range investigated. The detection mechanism of the sensor is attributable to the change in occupancy ratio of the oxygen vacancies of the adsorptive oxide layer upon oxygen exposure, increasing the contact potential between adsorptive-oxide and intrinsic-diamond
    IEEE Transactions on Electron Devices 06/1999; · 2.06 Impact Factor
  • D.V. Kerns Jr, J.D. Irwin, S.E. kerns
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    ABSTRACT: As we rapidly approach the new millennium, technology seems to advance at a prodigious pace. In addition, electrotechnology seems to literally permeate the lives of every individual in modern society. One need only consider the changes that have taken place in the last several years in both the computer and communication technology arenas, vis-a-vis the Internet, to see the impact of this advancing tide. Engineering education must keep pace. However, engineering curricula are typically squeezed from all sides. Engineering educators find themselves caught, at the very least, between university core requirements and pressure to cut the number of hours required for graduation. As a result, the electrical engineering material for nonmajors is typically packaged in a single course. If would appear at first blush that in most colleges both the content and presentation of this material has changed very little for more than a decade. The EE for nonmajors course thus appears to be at the crossroads between a somewhat standard presentation of relatively stagnant material on the one hand and an exploding electrotechnology on the other. First this describes what is being done regarding the nonmajors course throughout the engineering community at the present time. Second it identifies several key problems associated with reform of this course. And finally, a discussion is presented of what this community could do with this nonmajor course, within given realistic limitations
    Frontiers in Education Conference, 1999. FIE '99. 29th Annual; 02/1999
  • D.V. Kerns Jr, H.J. Barnaby, S.E. Kerns
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    ABSTRACT: CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations
    IEEE Transactions on Nuclear Science 01/1999; · 1.22 Impact Factor
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    ABSTRACT: Sensors capable of reliable detection of hydrogen gas concentration are designed and fabricated using intrinsic diamond and doped diamond films in a MIS structure. The performance of the diamond-based gas sensor in radiation environments has been characterized by I-V measurements at room temperature. High sensitivity to hydrogen and extreme hardness to total ionizing radiation doses have been observed; the minimal change in gas-sensing characteristics at 10 MRAD is demonstrated experimentally. Analysis of the current transport mechanism, ideality factor and apparent barrier height confirm the radiation insensitivity of diamond-based MIS hydrogen sensors
    IEEE Transactions on Nuclear Science 01/1999; · 1.22 Impact Factor
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    ABSTRACT: On the basis of the analysis of all the thick-film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain sensitivity of thick-film resistors
    Southeastcon '91., IEEE Proceedings of; 05/1991
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    ABSTRACT: A lumped-parameter model derived from transistor characterization data has been used in SPICE analyses to study and predict the single-event-upset thresholds for SIMOX SOI (separation by implantation of oxygen, silicon-on-insulator) SRAMs (static random-access memories) with a variety of cell designs. The modeling of CMOS/SOI transistors with fully bottomed sources and drains includes direct representation of the parasitic lateral bipolar structure. Results indicate that, in the SOI devices investigated, single events simulate a localized bipolar response, even in devices with bodies electrically tied to active nodes. The bipolar response enhances the destabilizing effect of an ion event. The total current impulse contributing to upset can be significantly greater than that produced by direct ionization within the hit transistor, i.e., devices can be upset by ions that deposit less than the total charge required to initiate logic state reversal. In light of this, advanced CMOS/SOI-SOS logic with short channel lengths (and therefore significant parasitic bipolar gain) may exhibit critical LETs (linear energy transfers) lower than expected from simple scaling rules, and thinning of the active regions may not significantly reduce single-event rates in such CMOS/SOI digital circuits
    IEEE Transactions on Nuclear Science 01/1990; · 1.22 Impact Factor
  • D.V. Kerns Jr, W.P. Kang, A.R. Ali-Ali
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    ABSTRACT: Experimental investigations of piezoresistive effects in thick-film resistors were performed by measuring longitudinal and transverse gauge factors as a function of applied strain on two different substrates' thickness. The relative change in resistance of the thick-film resistors studied was linear, symmetric, reproducible, and free of measurable hysteresis for strain between 0 and ±1000 microstrain. A gauge factor of approximately twice that previously reported was obtained. The suitability of this technology for strain-sensing applications is discussed
    Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE; 05/1989
  • D.V. Kerns Jr
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    ABSTRACT: The author reviews the current status of semiconductor manufacturing education in US universities and identifies some shortcomings. He describes the development of an initiative in microelectronic manufacturing engineering curriculum that was recently implemented at Florida State University. This program utilizes an interdisciplinary curriculum to address the problems identified by the author. A workshop with representatives from Semiconductor Research Corporation (SRC) companies, university leaders and SRC managers was held to define appropriate curricula. In addition, a comprehensive independent survey which attempts to assess the current semiconductor industry needs in education is presented. Finally, the lessons learned, including specific recommendations of students, faculty, and industry representatives, are presented
    IEEE Transactions on Education 03/1989; · 0.95 Impact Factor
  • D.V. Kerns Jr
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    ABSTRACT: Enhancements of the peaking current reference with significantly improved supply voltage and temperature independence are discussed. The addition of current mirror circuitry forces the peaking source to operate near its optimum operating range at all times; the optimum bias conditions for this source differ from those of a previously presented (K. Fukahari et al. 1979) basic peaking source. A theory for optimization is developed and practical application of this source, computer circuit simulations and experimental data are presented
    IEEE Journal of Solid-State Circuits 07/1988; · 3.06 Impact Factor