Publications (3)2.19 Total impact
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Article: Erbium-Doped Waveguide Laser in Tantalum Pentoxide
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ABSTRACT: Tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta<sub>2</sub>O<sub>5</sub> rib waveguides doped with 2.7 10<sup>20</sup> erbium ions/cm<sup>3</sup>, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.IEEE Photonics Technology Letters 12/2010; · 2.19 Impact Factor -
Article: Er:Ta2O5 waveguide optimization and spectroscopy
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ABSTRACT: The optimization of erbium-doped Ta2O5 thin film waveguides deposited by magnetron sputtering is described. Background losses below 0.4dB/cm have been obtained before post-annealing. A broad photoluminescence spectrum centered at 1534nm is obtained, and the photoluminescence power and fluorescence lifetime increase with post-annealing, yielding promising results for compact amplifiers. -
Article: Waveguiding and photoluminescence in Er3+ doped Ta2O5 planar waveguides
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ABSTRACT: The optimization of erbium-doped Ta2O5 thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4dB/cm at 633nm have been obtained before post-annealing. The samples, when pumped at 980nm yielded abroad photoluminescence spectrum (FWHM ~50 nm) centred at 1534nm, corresponding to 4I13/2-4I15/2 transition of Er3+ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4ms was achieved, yielding promising results for compact waveguide amplifiers.