[Show abstract][Hide abstract] ABSTRACT:
We fabricated bismuth (Bi) nanowires with low energy electron beam lithography using silver (Ag) nanocrystal shadowmasks and a subsequent chlorine reactive ion etching. Submicron-size metal contacts on the single Bi nanowire were successfully prepared by in situ focused ion beam metal deposition for transport measurements. The temperature dependent resistance measurements on the 50 nm wide Bi nanowires showed that the resistance increased with decreasing temperature, which is characteristic of semiconductors and insulators.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 01/2000; DOI:10.1116/1.582348 · 2.14 Impact Factor