Publications (3)4.34 Total impact
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Article: Importance of sample preheating in oxidation of GexSi1-x
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ABSTRACT: Wet thermal oxidation at 1000 °C of a 470‐nm‐thick epitaxial Ge 0.36 Si 0.64 layer on (100)Si produces oxides of different composition depending on the details of the oxidation procedure. When a cold sample is directly exposed to the hot steam, the surface layer of the oxide contains both Ge and Si. Only SiO 2 forms if a preheated sample is exposed to the hot steam. The effect is not present for dry oxidation and is attributed to the known enhancement of the wet oxidation rate by Ge, coupled with the transient warm up of a sample when it is immersed cold in hot steam.Journal of Applied Physics 05/1992; · 2.17 Impact Factor -
Article: Wet oxidation of GeSi at 700 °C
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ABSTRACT: About 500‐nm‐thick films of Ge 0.36 Si 0.64 and Ge 0.28 Si 0.72 grown epitaxially on (100)Si have been oxidized at 700 °C in wet ambient. A uniform Ge x Si 1-x O 2 oxide layer forms with a smooth interface between it and the unoxidized Ge x Si 1-x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross‐sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.Journal of Applied Physics 05/1992; · 2.17 Impact Factor -
Article: Wet oxidation of GeSi at (700)C
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ABSTRACT: About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700-degrees-C in wet ambient. A uniform GexSi1-xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1-x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
