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ABSTRACT: Djara, Vladimir Cherkaoui, Karim Schmidt, Michael Monaghan, Scott O'Connor, Eamon Povey, Ian M. O'Connell, Dan Pemble, Martyn E. Hurley, Paul K.
IEEE Transactions on Electron Devices 01/2012; 59:1084-1090. · 2.32 Impact Factor
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E. O'Connor,
K. Cherkaoui,
S. Monaghan, D. O'Connell,
I. Povey,
P. Casey,
S. B. Newcomb,
Y. Y. Gomeniuk,
G. Provenzano,
F. Crupi,
G. Hughes,
P. K. Hurley
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ABSTRACT: O'Connor, E. Cherkaoui, K. Monaghan, S. O'Connell, D. Povey, I. Casey, P. Newcomb, S. B. Gomeniuk, Y. Y. Provenzano, G. Crupi, F. Hughes, G. Hurley, P. K.
Journal of Applied Physics 01/2012; 111. · 2.17 Impact Factor
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ABSTRACT: In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20 nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-kappa gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO<sub>2</sub>. We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.
Reliability Physics Symposium, 2009 IEEE International; 05/2009
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Microelectronics Reliability. 01/2009; 49:1052-1055.
