-
[show abstract]
[hide abstract]
ABSTRACT: P-channel MOSFETs of a commercial 0.25 μm CMOS technology have been irradiated by high linear energy transfer (LET) iodine (I) and low LET silicon (Si) ions up to 300 Mrad(Si) and 500 Mrad(Si), respectively. Threshold voltage variations (ΔV<sub>TH</sub>) up to -0.46 V and -0.44 V have been measured at the highest I and Si doses. Both oxide positive trapped charge (ΔV<sub>OX</sub>) and interface states (ΔV<sub>IT</sub>) contribute to ΔV<sub>TH</sub> with a ratio ΔV<sub>IT</sub>/ΔV<sub>OX</sub> ≈ 1 (< 1) for high (low) LET ions. After 40 days at room temperature, most of the positive charge is recombined by electron tunneling from the oxide interfaces, while only a small amount (6%-16%) of interface states is annealed. A huge 1/f noise increase (higher for I ions) is observed after irradiation. Finally, radiation induced soft breakdown (radiation-induced leakage current) conduction through the gate oxide is generated by high (low) LET ions for |V<sub>g</sub>| > 1.6 V (> 3.4 V).
IEEE Transactions on Nuclear Science 07/2002; · 1.45 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: P-channel MOSFETs of a commercial 0.25 μm CMOS technology have been irradiated by high linear energy transfer (LET) iodine (I) and low LET silicon (Si) ions up to 300 Mrad(Si) and 500 Mrad(Si), respectively. Threshold voltage variations (ΔV<sub>TH</sub>) up to -0.46 V and -0.44 V have been measured at the highest I and Si doses. Both oxide positive trapped charge (ΔV<sub>OX</sub>) and interface states (ΔV<sub>IT</sub>) contribute to ΔV<sub>TH</sub> with a ratio ΔV<sub>IT</sub>/ΔV<sub>OX</sub>=1 (<1) for high (low) LET ions. After 40 days at room temperature most of the positive charge is recombined by electron tunneling from the oxide interfaces, while only a small amount (6%-16%) of interface states is annealed. A huge 1/f noise increase (higher for I ions) is observed after irradiation. Finally radiation induced soft breakdown (radiation induced leakage current) conduction through the gate oxide is generated by high (low) LET ions for |V<sub>g</sub>|>1.6 V (>3.4 V).
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on; 10/2001
-
F. Faccio,
G. Anelli,
M Campbell,
M. Delmastro,
P. Jarron,
K. Kloukinas,
A Marchioro,
P. Moreira, E Noah,
W. Snoeys,
T. Calin,
J. Cosculluela,
R. Velazco,
M. Nicolaidis,
A Giraldo
[show abstract]
[hide abstract]
ABSTRACT: Individual transistors, resistors and shift registers have been designed using radiation tolerant layout practices in a commercial quarter micron process. A modelling effort has led to a satisfactory formulation for the effective aspect ratio of the enclosed transistors used in these layout practices. All devices have been tested up to a total dose of 30Mrad(SiO 2 ). The threshold voltage shift after irradiation and annealing was about +45mV for NMOS and-55mV for PMOS transistors, no leakage current appeared, and the mobility degradation was below 6%. The value of resistors increased by less than 10%. Noise measurements made on transistors with W=2mm and L varying between 0.36 and 0.64m revealed a corner noise frequency of about 200kHz for the NMOS and 12kHz for the PMOS. Irradiation up to 30Mrad(SiO 2 ) did not significantly affect the noise performance. The shift registers continuously operated at 1.25MHz during the irradiation, and no error was detected in the pattern propagation. N...
07/2001;
-
M. Raymond,
M. French,
J. Fulcher,
G. Hall,
L. Jones,
K. Kloukinas,
L.-K. Lim,
G. Marseguerra,
P. Moreira,
Q. Morrissey,
A. Neviani, E. Noah
[show abstract]
[hide abstract]
ABSTRACT: The APV25 is a chip designed for readout of silicon microstrips in
the CMS tracker at the CERN Large Hadron Collider. It is the first major
chip for a high energy physics experiment to exploit a modern commercial
0.25 μm CMOS technology. Experimental characterisation of the circuit
shows excellent performance before and after irradiation. Automated
probe testing of many chips has demonstrated a very high yield. A
summary of the design, detailed results from measurements, and probe
testing results are presented
Nuclear Science Symposium Conference Record, 2000 IEEE; 02/2000
-
P Pm,
F. Faccio,
G. Anelli,
M Campbell,
M. Delmastro,
P. Jarron,
K. Kloukinas,
A Marchioro,
P. Moreira, E Noah,
W. Snoeys,
T. Calin,
J. Cosculluela,
R. Velazco,
M. Nicolaidis,
A Giraldo
[show abstract]
[hide abstract]
ABSTRACT: Individual transistors, resistors and shift registers have been designed using radiation tolerant layout practices in a commercial quarter micron process. A modelling effort has led to a satisfactory formulation for the effective aspect ratio of the enclosed transistors used in these layout practices. All devices have been tested up to a total dose of 30Mrad(SiO 2 ). The threshold voltage shift after irradiation and annealing was about +45mV for NMOS and-55mV for PMOS transistors, no leakage current appeared, and the mobility degradation was below 6%. The value of resistors increased by less than 10%. Noise measurements made on transistors with W=2mm and L varying between 0.36 and 0.64Pm revealed a corner noise frequency of about 200kHz for the NMOS and 12kHz for the PMOS. Irradiation up to 30Mrad(SiO 2 ) did not significantly affect the noise performance. The shift registers continuously operated at 1.25MHz during the irradiation, and no error was detected in the pattern propagation....
12/1998;
-
R. Bainbridge,
P. Barrillon,
G. Hall,
J. Leaver, E. Noah,
M. Raymond,
D. Bisello,
A. Candelori,
A. Kaminsky,
V. Khomenkov,
L. Stefanutti,
M. Tessaro,
M. French
[show abstract]
[hide abstract]
ABSTRACT: The APV25 is the 128 channel CMOS chip developed for readout of the silicon microstrip tracker in the CMS experiment at the CERN Large Hadron Collider. The detector is now under construction and will be the largest silicon microstrip system ever built, with ∼200 m2 of silicon sensors. 75,000 chips are required to instrument the system, which must operate for 10 years in a high radiation environment with little or no possibility of replacement of any component. The readout chip is a crucial components, which must provide low noise and reliable operation. Thus, each readout chip must be carefully tested prior to installation in CMS modules and assurance of long-term performance of the readout electronics, especially verification of radiation tolerance, is highly desirable. This has been achieved by means of automated probe testing of every chip on the silicon wafers from the foundry, followed by studies of sample die to evaluate in more detail properties of the chips, which cannot easily be examined at the wafer level.During production, it was observed that the yield of good die varied unexpectedly from one production lot to another. This was investigated with significant help from the manufacturer and the process was optimised to ensure consistent high yield. A fraction of the dies, which successfully passed the wafer screening, are subjected to short-term X-ray irradiation to levels equivalent to that expected in CMS and are then annealed.Results are presented here and illustrate the excellent performance of APV25 under all expected operating conditions.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
-
M Raymond,
G. Cervelli,
M French,
J Fulcher,
G Hall,
L Jones,
L.-K. Lim,
G Marseguerra,
P. Moreira,
Q Morrissey,
A Neviani, E Noah
-
-
M J French,
L L Jones,
Q Morrissey,
A Neviani,
R Turchetta,
J Fulcher,
G Hall, E Noah,
M Raymond,
G. Cervelli,
P. Moreira,
G Marseguerra
-
-
J R Fulcher,
G Hall, E Noah,
M Raymond,
D Bisello,
A. Paccagnella,
J Wyss,
F. Faccio,
M Huhtinen,
M French,
L Jones
-
E. Noah,
T. Bauer,
D. Bisello,
F. Faccio,
M. Friedl,
J.R. Fulcher,
G. Hall,
M. Huhtinen,
A. Kaminsky,
M. Pernicka,
M. Raymond,
J. Wyss
[show abstract]
[hide abstract]
ABSTRACT: The microstrip tracker for the CMS experiment at the CERN Large Hadron Collider will be read out using APV25 chips. During high luminosity running the tracker will be exposed to particle fluxes up to 107 cm−2 s−1, which raises concerns that the APV25 could occasionally suffer Single Event Upsets (SEUs). The effect of SEU on the APV25 has been studied to investigate implications for CMS detector operation and from the viewpoint of detailed circuit operation, to improve the understanding of its origin and what factors affect its magnitude. Simulations were performed to reconstruct the effects created by highly ionising particles striking sensitive parts of the circuits, along with consideration of the underlying mechanisms of charge deposition, collection and the consequences. A model to predict the behaviour of the memory circuits in the APV25 has been developed and data collected from dedicated experiments using both heavy ions and hadrons have been shown to support it.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
-
M.J. French,
L.L. Jones,
Q. Morrissey,
A. Neviani,
R. Turchetta,
J. Fulcher,
G. Hall, E. Noah,
M. Raymond,
G. Cervelli,
P. Moreira,
G. Marseguerra
[show abstract]
[hide abstract]
ABSTRACT: The APV25 is a 128-channel analogue pipeline chip for the readout of silicon microstrip detectors in the CMS tracker at the LHC. Each channel comprises a low noise amplifier, a 192-cell analogue pipeline and a deconvolution readout circuit. Output data are transmitted on a single differential current output via an analogue multiplexer. The chip is fabricated in a standard 0.25 μm CMOS process to take advantage of the radiation tolerance, lower noise and power, and high circuit density. Experimental characterisation of this circuit shows full functionality and good performance both in pre- and post-irradiation (20 Mrad) conditions. The measured noise is significantly reduced compared to earlier APV versions. A description of the design and results from measurements prior to irradiation are presented.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
