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ABSTRACT: Design, fabrication and characterization of SOI ring resonators using slightly etched rib waveguides are reported. Q-factor of 35300 has been measured for a 100 mum ring radius and a 450 nm coupling gap.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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L. Vivien,
M. Rouviere,
D. Marris-Morini,
J. Mangeney,
P. Crozat,
E. Cassan,
X. Le Roux,
S. Laval, L. El Melhaoui,
J.-F. Damlencourt,
J.-M. Fedeli
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ABSTRACT: Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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ABSTRACT: We present all-optical tuning and switching of a microcavity inside a two-dimensional photonic crystal waveguide. The photonic crystal structure is fabricated in silicon-on-insulator using complementary metal-oxide semiconductor processing techniques based on deep ultraviolet lithography and is completely buried in a silicon dioxide cladding that provides protection from the environment. By focusing a laser onto the microcavity region, both a thermal and a plasma dispersion effect are generated, allowing tuning and fast modulation of the in-plane transmission. By means of the temporal characteristics of the in-plane transmission, we experimentally identify a slower thermal and a fast plasma dispersion effect with modulation bandwidths of the order of several 100 kHz and up to the gigahertz level, respectively.
Optics Letters 03/2006; 31(4):513-5. · 3.40 Impact Factor
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ABSTRACT: The low excess loss experimental demonstration of ten successive light divisions is presented. This distribution is realized by using shallow-etched rib silicon-on-insulator waveguides with compact beam splitters and 90° turns based on total internal reflection corner mirrors. The measured excess optical loss is only 0.7 dB per division. This result is an important step in a 1 to 1024 optical distribution demonstration.
Applied Physics Letters 12/2005; · 3.84 Impact Factor
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ABSTRACT: Experimental demonstration of successive optical divisions from one input to 1024 output points is presented using slightly etched submicron rib SOI waveguides. Excess loss per division of 0.7 dB has been measured.
Group IV Photonics, 2005. 2nd IEEE International Conference on; 10/2005
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ABSTRACT: We present results of the optical characterization of silicon photonic crystal waveguides and microcavities that are completely buried in a silicon dioxide cladding and are fabricated by deep ultraviolet (UV) lithography. The advantages of buried waveguides and deep UV lithography are discussed. Transmission spectra and loss factors for photonic crystal waveguides, as well as quality factors for resonant microcavities, are obtained. The observed characteristics are in good agreement with three-dimensional simulations.
Journal of Applied Physics 08/2005; · 2.17 Impact Factor
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ABSTRACT: A first experimental demonstration of a planar superprism in silicon microphotonics technology using silicon on insulator (SOI) substrates is presented. Experimental results for anomalous wavelengthdependent angular dispersion in SOI triangular lattice planar photonic crystals are reported. An angular swing of 14 degrees is measured for light propagating near the Gamma-K direction as the input wavelength is changed from 1295 nm to 1330 nm, which corresponds to an angular dispersion of 0.4 degrees /nm. For the Gamma-M direction, a negative wavelength dispersion has been recorded. An opposite sign angular deviation of 21 degrees is observed as the input wavelength is changed from 1316 nm to 1332 nm, i.e. a dispersion of 1.3 degrees /nm.
Optics Express 12/2004; 12(23):5690-6. · 3.59 Impact Factor
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ABSTRACT: We present all-optical tuning and switching of a microcavity inside a two-dimensional photonic crystal waveguide. The photonic crystal structure is fabricated in silicon-on-insulator using complementary metal-oxide semiconductor processing techniques based on deep ultraviolet lithography and is completely buried in a silicon dioxide cladding that provides protection from the environment. By focusing a laser onto the microcavity region, both a thermal and a plasma dispersion effect are generated, allowing tuning and fast modulation of the in-plane transmission. By means of the temporal characteristics of the in-plane transmission, we experimentally identify a slower thermal and a fast plasma dispersion effect with modulation band-widths of the order of several 100 kHz and up to the gigahertz level, respectively. © 2006 Optical Society of America.
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[show abstract]
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ABSTRACT: We present all-optical tuning and switching of a microcavity inside a two-dimensional photonic crystal waveguide. The photonic crystal structure is fabricated in silicon-on-insulator using complementary metal-oxide semiconductor processing techniques based on deep ultraviolet lithography and is completely buried in a silicon dioxide cladding that provides protection from the environment. By focusing a laser onto the micro cavity region, both a thermal and a plasma dispersion effect are generated, allowing tuning and fast modulation of the in-plane transmission. By means of the temporal characteristics of the in-plane transmission, we experimentally identify a slower thermal and a fast plasma dispersion effect with modulation bandwidths of the order of several 100 kHz and up to the gigahertz level, respectively.
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[show abstract]
[hide abstract]
ABSTRACT: We present results of the optical characterization of silicon photonic crystal waveguides and microcavities that are completely buried in a silicon dioxide cladding and are fabricated by deep ultraviolet (UV) lithography. The advantages of buried waveguides and deep UV lithography are discussed. Transmission spectra and loss factors for photonic crystal waveguides, as well as quality factors for resonant microcavities, are obtained. The observed characteristics are in good agreement with three-dimensional simulations.
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[show abstract]
[hide abstract]
ABSTRACT: We present results of the optical characterization of silicon photonic crystal waveguides and microcavities that are completely buried in a silicon dioxide cladding and are fabricated by deep ultraviolet (UV) lithography. The advantages of buried waveguides and deep UV lithography are discussed. Transmission spectra and loss factors for photonic crystal waveguides, as well as quality factors for resonant microcavities, are obtained. The observed characteristics are in good agreement with three-dimensional simulations. © 2005 American Institute of Physics.
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ABSTRACT: The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels
Group IV Photonics, 2006. 3rd IEEE International Conference on;
