[Show abstract][Hide abstract] ABSTRACT: The paper reports the design, fabrication and characterization of silicon-on-insulator (SOI) microring resonators using shallow etched rib waveguides. The variation of the Q-factor of microring resonators as a function of the ring diameter and coupling gap between the input waveguide and the ring is studied. Such structures are fabricated using e-beam lithography and reactive ion etching steps. Propagation loss of shallow etching rib waveguide has been evaluated to 0.8 dB/cm for wavelengths around 1550 nm. With a ring diameter of 100 mum and a coupling gap of 450 nm, the measured Q -factor is 35300. These results are matched by 3-D numerical optical modeling.
Journal of Lightwave Technology 01/2009; 27(10):1387-1391. · 2.56 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1mum electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 mum wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7mum electrode spacing under 1V bias.
[Show abstract][Hide abstract] ABSTRACT: Metal-semiconductor-metal (MSM) Ge photodetectors integrated in silicon-on-insulator waveguides using butt coupling configuration have been experimentally demonstrated. Bandwidths reach 28 GHz under 6 V bias at wavelengths of 1.31 and 1.55 mum for a photodetector with 1 mum electrode spacing, which is almost compatible with a 40 Gb/s operation. High responsivity of about 1 A/W at both wavelengths for a 10 mum long photodetector has been obtained. Under 1 V bias, MSM photodetectors with 1 and 0.7 mum electrode spacings have bandwidths of 9 and 17 GHz, respectively, which is compatible with a data transmission speed of 10 Gb/s.
[Show abstract][Hide abstract] ABSTRACT: Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
[Show abstract][Hide abstract] ABSTRACT: Design, fabrication and characterization of SOI ring resonators using slightly etched rib waveguides are reported. Q-factor of 35300 has been measured for a 100 mum ring radius and a 450 nm coupling gap.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
[Show abstract][Hide abstract] ABSTRACT: We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.
[Show abstract][Hide abstract] ABSTRACT: This paper reports on fabrication and characterization of two kinds of photodetectors: interdigited metal-germanium on silicon-metal photodetectors (Metal-Semiconductor-Metal or MSM) and pin germanium photodiodes for operation at optical telecommunication wavelengths. For both 1.31 micron and 1.55 micron wavelengths, the measured -3dB bandwidth of interdigited MSM photodetectors is 35 GHz under 2V bias for electrode spacing equal to 0.5 micron. For pin diodes at 1.55 micron wavelength, the measured -3dB bandwidth under -3V bias ranges from 9 to 29 GHz for mesa diameters from 20 to 7 microns, respectively.
[Show abstract][Hide abstract] ABSTRACT: An experimental characterization of the grating couplers for sub-micrometer silicon-on-insulator (SOI) waveguides is presented. The grating couplers have been designed, realized, and characterized for the +1 diffraction order at an operating wavelength of 1.31 mum for TE polarization. At the resonant angle, a coupling efficiency higher than 55% has been measured. The angular coupling range and the wavelength tolerance have been evaluated to 3deg and 20 nm, respectively. The grating coupler is followed by a taper, and about 50% of the input power at 1.31 mum is coupled into sub-micrometer rib and strip SOI waveguides. The ration between light power decoupled toward the cladding and light power decoupled toward the substrate is about three
Journal of Lightwave Technology 11/2006; · 2.56 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: Different technologies for the fabrication of Germanium photodetectors were developed. Germanium was grown by RPCVD in a silicon cavity in order to provide a direct coupling with a rib silicon waveguide. With direct deposition of Ti/TiN/AlCu on Ge, Metal-Schotkky-Metal (MSM) diodes were formed. PIN photodiode were fabricated either with in-situ doping during RP- CVD epitaxy of Ge, either by ion implantation. For vertical PIN photodiode, the germanium was successfully etched either in mesa either anisotropically with Cl2 gazes. Small footprint Ge photodiodes can lead to high speed operation on CMOS
[Show abstract][Hide abstract] ABSTRACT: We present all-optical tuning and switching of a microcavity inside a two-dimensional photonic crystal waveguide. The photonic crystal structure is fabricated in silicon-on-insulator using complementary metal-oxide semiconductor processing techniques based on deep ultraviolet lithography and is completely buried in a silicon dioxide cladding that provides protection from the environment. By focusing a laser onto the microcavity region, both a thermal and a plasma dispersion effect are generated, allowing tuning and fast modulation of the in-plane transmission. By means of the temporal characteristics of the in-plane transmission, we experimentally identify a slower thermal and a fast plasma dispersion effect with modulation bandwidths of the order of several 100 kHz and up to the gigahertz level, respectively.
[Show abstract][Hide abstract] ABSTRACT: A new approach is proposed to realize an optical link for intrachip optical interconnects. This link includes III-V compound-based laser sources and photodetectors, and silicon-on-insulator-based strip waveguides. The heterogeneous integration of an InP-based microdisk laser with a silicon waveguide using SiO<sub>2</sub>-SiO<sub>2</sub> molecular bonding and nanofabrication procedures is emphasized. The technological procedure is described and first experimental results show that, with an adequate configuration, 35% of light could be coupled from the optically pumped microlaser to the waveguide, as a result of the vertical evanescent coupling.
[Show abstract][Hide abstract] ABSTRACT: The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels
Group IV Photonics, 2006. 3rd IEEE International Conference on; 01/2006
[Show abstract][Hide abstract] ABSTRACT: The low excess loss experimental demonstration of ten successive light divisions is presented. This distribution is realized by using shallow-etched rib silicon-on-insulator waveguides with compact beam splitters and 90° turns based on total internal reflection corner mirrors. The measured excess optical loss is only 0.7 dB per division. This result is an important step in a 1 to 1024 optical distribution demonstration.
[Show abstract][Hide abstract] ABSTRACT: Experimental demonstration of successive optical divisions from one input to 1024 output points is presented using slightly etched submicron rib SOI waveguides. Excess loss per division of 0.7 dB has been measured.
Group IV Photonics, 2005. 2nd IEEE International Conference on; 10/2005
[Show abstract][Hide abstract] ABSTRACT: We present results of the optical characterization of silicon photonic crystal waveguides and microcavities that are completely buried in a silicon dioxide cladding and are fabricated by deep ultraviolet (UV) lithography. The advantages of buried waveguides and deep UV lithography are discussed. Transmission spectra and loss factors for photonic crystal waveguides, as well as quality factors for resonant microcavities, are obtained. The observed characteristics are in good agreement with three-dimensional simulations.
Journal of Applied Physics 08/2005; · 2.21 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: In recent years, many groups have envisioned the possibility of integrating optical and electronic devices in a single chip. In this paper, we study the integration of a photonic crystal laser fabricated in InP with a silicon passive waveguide. The coupling of energy between a 2D photonic crystal (PhC) triangular lattice band-edge laser and waveguide positioned underneath is analyzed in this paper. We show that a 40% coupling could be achieved provided the distance between the laser and the waveguide is carefully adjusted. A general description of the fabrication process used to realize these devices is also included in this paper.
[Show abstract][Hide abstract] ABSTRACT: Silicon-on-insulator (SOI) substrates have generated an increasing interest in the recent years, for both microelectronic and microphotonic applications. SOI substrates allow a strong integration density of optical devices. In this paper, experimental results concerning the passive optical SOI devices (grating couplers, rib waveguides, compact T-splitter, corner mirrors) and 16 optical distributions suitable for intrachip optical interconnects will be presented.
[Show abstract][Hide abstract] ABSTRACT: A first experimental demonstration of a planar superprism in silicon microphotonics technology using silicon on insulator (SOI) substrates is presented. Experimental results for anomalous wavelengthdependent angular dispersion in SOI triangular lattice planar photonic crystals are reported. An angular swing of 14 degrees is measured for light propagating near the Gamma-K direction as the input wavelength is changed from 1295 nm to 1330 nm, which corresponds to an angular dispersion of 0.4 degrees /nm. For the Gamma-M direction, a negative wavelength dispersion has been recorded. An opposite sign angular deviation of 21 degrees is observed as the input wavelength is changed from 1316 nm to 1332 nm, i.e. a dispersion of 1.3 degrees /nm.
[Show abstract][Hide abstract] ABSTRACT: A Silicon On Insulator (SOI) photonic crystal superprism has been designed using the plane-wave method and equi-frequency contours. Samples have been fabricated by 193 nm DUV lithography and RIE etching process. Optical measurements performed around 1.33 µm show an optical dispersion of about 0.3°/nm.