C. Skierbiszewski

Publications (74)82.58 Total impact

• Article: Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20[overline 2]1) substrates

  M. Sawicka, C. Cheze, H. Turski, G. Muziol, S. Grzanka, C. Hauswald, O. Brandt, M. Siekacz, R. Kucharski, T. Remmele, M. Albrecht, M. Krysko, E. Grzanka, T. Sochacki, C. Skierbiszewski
  Applied Physics Letters 03/2013; 102(11):111107-4. · 3.84 Impact Factor
• Article: Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

  H. Turski, M. Siekacz, Z. R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski
  Journal of Crystal Growth 01/2013; · 1.73 Impact Factor
• Article: True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

  C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Wolny, G. Cywiński, L. Marona, P. Perlin, P. Wiśniewski, M. Albrecht, Z. R. Wasilewski, S. Porowski
  Applied Physics Express 01/2012; 5:112103. · 3.01 Impact Factor
• Article: Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

  M. Siekacz, M. Sawicka, H. Turski, G. Cywiński, A. Khachapuridze, P. Perlin, T. Suski, M. Boćkowski, J. Smalc-Koziorowska, M. Kryśko, R. Kudrawiec, M. Syperek, J. Misiewicz, Z. Wasilewski, S. Porowski, C. Skierbiszewski
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  ABSTRACT: We report on optically pumped lasing at 500 nm on InGaN laser structures grown by plasma assisted molecular beam epitaxy. The InGaN laser structures were grown under group III-rich conditions on bulk (0001) GaN substrates. The influence of the nitrogen flux and growth temperature on the indium content of InGaN layers was studied. We demonstrate that at elevated growth temperatures, where appreciable dissociation rate for In-N bonds is observed, the indium content of InGaN layers increases with increasing nitrogen flux. We show that growth of InGaN at higher temperatures improves optical quality of InGaN quantum wells, which is crucial for green emitters. The influence of piezoelectric fields on the lasing wavelength is also discussed. In particular, the controversial issue of partial versus complete screening of built-in electric field at lasing conditions is examined, supporting the former case.
  Journal of Applied Physics 09/2011; 110(6):063110-063110-7. · 2.17 Impact Factor
• Article: InGaN laser diodes operating at 450--460 nm grown by rf-plasma MBE

  C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, A. Feduniewicz-Zmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, S. Porowski
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 01/2011; 30(2):02B102-5.
• Article: Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

  J. Smalc-Koziorowska, M. Sawicka, T. Remmele, C. Skierbiszewski, I. Grzegory, M. Albrecht
  Appl. Phys. Lett. 01/2011; 99(6):061901.
• Source

  Available from: arxiv.org

  Article: Rashba field in GaN

  A. Wolos, Z. Wilamowski, C. Skierbiszewski, A. Drabinska, B. Lucznik, I. Grzegory, S. Porowski
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  ABSTRACT: We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.
  12/2010;
• Article: Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

  M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywiński, M Siekacz, C Skierbiszewski
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  ABSTRACT: The authors have applied modulation spectroscopy to study the intersubband (IS) and the interband (IB) transitions in InGaN/AlInN multi-quantum well (QW) structures with the QW width varying from 1.3 to 1.8 nm, and proposed a simple method to analyse the broadening of IS and IB transitions. With this method the measured broadenings of IS and IB transitions have been compared with theoretical calculations performed within the effective mass approximation for a QW system with various QW width fluctuations. Within the framework of this comparison it has been found that the QW width fluctuation in the investigated InGaN/AlInN QW system is close to 2 monolayers.
  Journal of Physics D Applied Physics 04/2010; 43(19):195101. · 2.54 Impact Factor
• Article: TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate

  S. Kret, F. Ivaldi, M. Żak, A. Feduniewicz-Żmuda, M. Siekacz, G. Cywiński, C. Skierbiszewski
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  ABSTRACT: The structural investigation of the processed InGaN/GaN LDs and LEDs structures are performed by Transmission Electron Microscopy. A plasma assisted molecular beam epitaxy (PAMBE) process is used to fabricate laser structures on high pressure bulk GaN substrates. The indium composition inside the active multi quantum wells (MQW) region is measured by the analysis of the local lattice distortion using lattice fringes images. The characterization of different defects in the laser's structure is given in this paper. Defects, crossing the entire active region of the laser structure, have been detected. These defects can be related to the discontinuities of the Au/Ni contact. The local heating caused by the local non-uniform current density can be the origin of these defects. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  physica status solidi (c) 03/2010; 7(5):1325 - 1328.
• Article: Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

  G. Cywinski, M. Gladysiewicz, R. Kudrawiec, M. Kry s ko, A. Feduniewicz-Zmuda, M. Siekacz, M. Sawicka, P. Wolny, J. Smalc-Koziorowska, L. Nevou, M. Tchernycheva, F. H. Julien, J. Misiewicz, C. Skierbiszewski
  J ournal of Vac cum Sci ence and Technol ogy B. 01/2010; 28(3):C3B17-C3B21.
• Article: Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues

  R. Kudrawiec, M. Siekacz, M. Krysko, G. Cywinski, J. Misiewicz, C. Skierbiszewski
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  ABSTRACT: Contactless electroreflectance (CER) supported by photoluminescence (PL) has been applied to study (i) the surface band bending, (ii) the band gap bowing, and (iii) the Stokes shift for InGaN layers grown by molecular beam epitaxy with 0.14≤ In ≤0.36 . The type of surface band bending has been investigated on the basis of the shape of CER resonance. It has been found that the surface band bending changes from n-type for layers with low indium content ( In ≪27%) to flatband (or weak p-type band) for layers with In ∼35% . The band gap bowing has been determined to be 1.4±0.2 and 2.1±0.3 eV for CER data with and without strain corrections, respectively. From this analysis it has been concluded that the reliable value of the bowing parameter for unstrained InGaN should be between 1.4 and 2.1 eV. Comparing CER with PL data it has been found that the Stokes shift rises from 20 to 120 meV when the indium concentration increased from 14% to 36%. In addition, it has been observed that the intensity of PL from InGaN layers decreased exponentially with the increase in the indium content. The last two findings are attributed to an easier formation of native point defects and stronger indium segregation in InGaN alloys with higher indium concentrations.
  Journal of Applied Physics 01/2010; · 2.17 Impact Factor
• Article: InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE

  M Siekacz, M. Ł. Szańkowska, A. Feduniewicz-Zmuda, J. Smalc-Koziorowska, G. Cywiński, S. Grzanka, Z. R. Wasilewski, I. Grzegory, B. Łucznik, S. Porowski, C. Skierbiszewski
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  ABSTRACT: In this work we study the growth of the Light Emitting Diodes (LEDs) by Plasma Assisted MBE (PAMBE). The active LEDs region was grown to cover the spectral range spanning from 415 nm to 520 nm. We demonstrate efficient LEDs with the highest optical power output of 1.5 mW and 20 mA for 415 nm. For longer wavelengths we observe a drop of the optical power. The reduction of the quantum efficiency for green emission can be related to the presence of strong built-in piezoelectric fields or increased number of nonradiative recombinarion centers. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  physica status solidi (c) 02/2009; 6(S2):S917 - S920.
• Source

  Available from: Witold Rzodkiewicz

  Article: Near IR Refractive Index for GaInN Heavily Doped with Silicon

  G Cywiński, R Kudrawiec, W Rzodkiewicz, M Kryśko, E Litwin-Staszewska, J Misiewicz, C Skierbiszewski
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  ABSTRACT: The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of Ga0.998In0.002N:Si has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2 × 10 20 cm −3 and 67 cm 2 /(V s), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 µm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 µm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive in-dex is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
  Acta Physica Polonica Series a 01/2009; 20. · 0.44 Impact Factor
• Article: Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells

  R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, G. Cywiński, M. Siekacz, C. Skierbiszewski
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  ABSTRACT: Contactless electroreflectance (CER) has been applied to investigate energies and intensities of optical transitions in GaInN/AlInN multi-quantum wells (MQWs) with the various QW widths (1.55 and 1.8 nm) and barrier thicknesses (3 and 6 nm). In addition to the ground state transition, optical transitions related to excited states (2H–1C and 1H–2C transitions, where kH–lC denotes a transition between the kth valence and the lth conduction subbands) have been observed in CER spectra. It has been found that the intensities of 2H–1C and 1H–2C transitions (i.e., transitions which are forbidden for non-polar square-like QWs) are comparable with the intensity of the ground state transition. In addition, it has been observed that the relative intensities of QW transitions depend on both the QW width as well as the barrier thickness. This experimental observation has been confirmed by theoretical calculations performed in the framework of the electron effective mass approximation model taking into account polarization effects in wurtzite III-N alloys. The calculations clearly show that the intensity of QW transitions for GaInN/AlInN MQWs strongly varies with the QW width as well as the barrier thickness.
  Microelectronics Journal. 01/2009;
• Article: Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions.

  R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, G. Cywinski, M. Siekacz, C. Skierbiszewski
  Microelectronics Journal. 01/2009; 40:392-395.
• Article: Contactless electroreflectance spectroscopy of inter‐ and intersub‐band transitions in AlInN/GaInN quantum wells

  R. Kudrawiec, M. Motyka, G. Cywin’ski, M. Siekacz, C. Skierbiszewski, L. Nevou, L. Doyennette, M. Tchernycheva, F. H. Julien, J. Misiewicz, G. Cywin’︁ski
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  ABSTRACT: Contactless electroreflectance (CER) spectroscopy has been applied to study inter- and intesub-band transitions in AlInN/GaInN multi quantum wells (MQWs). Due to strong built-in electric field, which is typical of III-nitrides, interband transitions between all QW subbands have been clearly observed. The energy difference between electron subbands has been found analyzing the 1H1C and 1H2C transitions (or 2H1C and 2H2C transitions), where k Hl C denotes a transition between the k th valence and the l th conduction subbands. In addition, an intersubband transition between the first and the second electron subbands has been observed in CER spectrum at 0.8 eV. It has been observed that the energy difference between electron subbands, which is extracted from interband transitions, is consistent with this one which is obtained from direct measurements of intersubband transitions by CER and photo induced absorption. It shows that CER is very promising technique to study both the inter- and intersub-band transitions in Al(In)N/Ga(In)N QWs. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  physica status solidi (c) 01/2008; 5(2):503 - 507.
• Source

  Available from: icm.edu.pl

  Article: Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization

  K Dybko, M Siekacz, C Skierbiszewski
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  ABSTRACT: We present the magnetoconductivity measurements of a high mobil-ity two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum cor-rections, the weak localization and antilocalization effects. It indicates the importance of the spin–orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature de-pendence of the dephasing time and total spin–orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities 2.2 × 10 12 cm −2 and 5.7 × 10 12 cm −2 , respectively.
  01/2008; 11420.
• Article: Complete in-plane polarization anisotropy of the A exciton in unstrained A-plane GaN films

  Pranob Misra, O. Brandt, H. T. Grahn, H. Teisseyre, M. Siekacz, C. Skierbiszewski, B. Łucznik
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  ABSTRACT: Using reflectance spectroscopy, the in-plane polarization behavior of unstrained C- and A-plane GaN films is experimentally investigated. While no in-plane polarization anisotropy is observed for all three band-gap related excitons (A, B, and C) in unstrained C-plane GaN films, the A exciton is completely linearly polarized perpendicular to the c axis in unstrained A-plane GaN films. However, the B and C excitons are only partially polarized. This observation is in excellent agreement with results based on band-structure calculations using the Bir-Pikus Hamiltonian for the wurtzite crystal structure.
  Applied Physics Letters 09/2007; 91(14):141903-141903-3. · 3.84 Impact Factor
• Article: Tunneling in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN

  S. Golka, G. Pozzovivo, W. Schrenk, G. Strasser, C. Skierbiszewski, M. Siekacz, I. Grzegory, S. Porowski
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  ABSTRACT: We report on negative differential resistance of a AlGaN-GaN-AlGaN double barrier. Using inductively coupled plasma reactive ion etching, 6 {mu}m square mesas have been fabricated on 0001 GaN substrates derived from bulk GaN crystals grown at high pressure. Double barrier and n+ contact layers were grown Ga face using plasma assisted molecular-beam epitaxy. We obtain peak currents around 10 kA/cm2 and a peak-to-valley ratio of about 2 at room temperature, while no improvement was observed at cryogenic temperatures. The drop in current does not depend on specific conditions of measurement; however, it slowly decays after each measurement. Partial recovery by thermal treatment was possible.
  AIP Conference Proceedings 04/2007; 893(1).
• Article: Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (110) nonpolar direction

  H. Teisseyre, C. Skierbiszewski, A. Khachapuridze, A. Feduniewicz-Żmuda, M. Siekacz, B. £ucznik, G. Kamler, M. Kryśko, T. Suski, P. Perlin, I. Grzegory, S. Porowski
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  ABSTRACT: This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (110) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm2 for a 700-μm-long cavity at room temperature.
  Applied Physics Letters 02/2007; 90(8):081104-081104-3. · 3.84 Impact Factor