[show abstract][hide abstract] ABSTRACT: We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.
Japanese Journal of Applied Physics 01/2003; 42:6248-6251. · 1.07 Impact Factor
[show abstract][hide abstract] ABSTRACT: We report on the growth of 99,9 % enriched 28Si, dislocation free monocrystals (111- and 100-orientated) with nearly 10 g weight and less than 1015 foreign atoms/cm3.
Crystal Research and Technology 12/2000; 35(9):1023 - 1026. · 1.12 Impact Factor
[show abstract][hide abstract] ABSTRACT: By means of a steady-state heat-flow technique, we have measured the thermal conductivity in a bulk crystal of highly enriched (99.8588%) 28Si for temperatures between 2 and 310 K. Maximum values of about 30 000 W m−1 K−1 for κ are found around 20 K. This is six times larger than in natural silicon and even exceeds the maximum in diamond with natural isotope abundance. At room temperature, we obtain a thermal conductivity enhancement of almost 60% compared to natural Si. Our results agree well with theoretical predictions.