-
Microelectronics Reliability. 01/2006; 46:1508-1513.
-
[show abstract]
[hide abstract]
ABSTRACT: A novel non-destructive and non-contacting technique for the spatially resolved detection of small leak-age currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leak-age current induced temperature variations down to 10 muK at a lateral resolution down to 5 mum. Leakage currents of about 1 mA can be localized within seconds and some muA may be detected after less than 1 h measurement.
Fraunhofer IWM.
-
[show abstract]
[hide abstract]
ABSTRACT: None of the conventionally displayed images of lock-in thermography (in-phase or 0° image, out of phase or −90° image, amplitude image, phase image) is able to become inverted in the presence of emissivity contrast. The phase signal is inherently emissivity-corrected, but here contributions of different heat sources superimpose very nonlinearly, which prevents any meaningful deconvolution. It is shown that the “0°/−90°” image, as an alternative kind of representation of lock-in thermography images, being also inherently emissivity-corrected, is able to be inverted for obtaining, e.g. the lateral power distribution in an electronic device. Blackening the surface by colloidal bismuth also may remove the emissivity contrast.
NDT & E International. 39(8):636-640.
-
Solid State Phenomena, v.82-84, 741-746 (2002).
