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ABSTRACT: This article presents a comprehensive review of the current research addressing the surface effects on physical properties and potential applications of nanostructured ZnO. Studies illustrating the transport, photoluminescence (PL), and photoconductivity properties of ZnO with ultrahigh surface-to-volume (S/V) ratio are reviewed first. Secondly, we exam-ine recent studies of the applications of nanostructured ZnO employing the surface effect on gas/chemical sensing, relying on a change of conductivity via electron trapping and detrap-ping process at the surfaces of nanostructures. Finally, we comprehensively review the photo -voltaic (PV) application of ZnO nanostructures. The ultrahigh S/V ratios of nanostructured devices suggest that studies on the synthesis and PV properties of various nanostructured ZnO for dye-sensitized solar cells (DSSCs) offer great potential for high efficiency and low-cost solar cell solutions. After surveying the current literature on the surface effects on nano -structured ZnO, we conclude this review with personal perspectives on a few surface-related issues that remain to be addressed before nanostructured ZnO devices can reach their ulti-mate potential as a new class of industrial applications.
Pure Appl. Chem. 01/2055; 82:2055-2073.
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ABSTRACT: Few layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~1010 cm Hz1/2/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs) and high thermal stability (at a working temperature up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop the 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.
ACS Nano 04/2013; · 10.77 Impact Factor
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ABSTRACT: We demonstrated a promising route to enhance the performance of inverted organic photovoltaic (OPV) devices by the incorporation of CuGaSe2 (CGS) quantum dots (QDs) into the ZnO buffer layer of P3HT:PCBM-based devices. The modification of QDs provides better band alignment between the organic/cathode interface, improves ZnO crystal quality, and increases photon absorption, leading to more effective carrier transport/collection. By employing this energy-harvesting scheme, short-circuit current density, open-circuit voltage, and fill factor of the OPV device after CGS QD modification are improved by 9.43%, 7.02% and 6.31%, respectively, giving rise to a 23.8% enhancement in the power conversion efficiency.
Nanoscale 03/2013; · 5.91 Impact Factor
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ABSTRACT: Focused ion beam lithography and a two-step anodization have been combined to fabricate a vertical fan-out platform containing an array of unique probes. Each probe comprises three anodic alumina nanochannels with a fan-out arrangement. The lithography is used to pattern an aluminum sheet with a custom-designed array of triangular 'cells' whose apexes are composed of nanoholes. The nanoholes grow into straight nanochannels under proper voltage in the first-step anodization. The second step uses a doubled voltage to induce lateral repulsion among the nanochannels' growth fronts originating in the same cell. Therefore, the fronts fan out. The repulsion roots in the inter-front distance being shorter than the naturally favoured length, which increases with anodization voltage. The fan-out evolution continues until the growth fronts originating in all the cells evolve into a close-packed two-dimensional hexagonal lattice whose spacing is identical to the favoured one. The chemical and physical mechanisms behind the fan-out fabrication are discussed. This novel fan-out platform facilitates probing and handling of many signals from different areas on a sample's surface and is therefore promising for applications in detection and manipulation at the nanoscale level.
Nanotechnology 01/2013; 24(5):055306. · 3.98 Impact Factor
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ABSTRACT: We in situ probed the surface band bending (SBB) by ultraviolet photoelectron spectroscopy (UPS) in conjunction with field-effect transistor measurements on the incompletely depleted ZnO nanowires (NWs). The diameter range of the NWs is ca. 150-350 nm. The several surface treatments, i.e., heat treatments and Au nanoparticles (NPs) decoration, were conducted to assess the impact of the oxygen adsorbates on the SBB. A 100-°C heat treatment leads to the decrease of the SBB to 0.74±0.15 eV with 29.9±3.0 nm in width, which is attributed to the removal of most adsorbed oxygen molecules from the ZnO NW surfaces. The SBB of the oxygen-adsorbed ZnO NWs is measured to be 1.53±0.15 eV with 43.2±2.0 nm in width. The attachment of Au NPs to the NW surface causes unusually high SBB (2.34±0.15 eV with the wide width of 53.3±1.6 nm) by creating open-circuit nano-Schottky junctions and catalytically enhancing the formation of the charge O2 adsorbates. These surface-related phenomena should be generic to all metal oxide nanostructures. Our study is greatly beneficial for the NW-based device design of sensor and optoelectronic applications via surface engineering.
ACS Nano 10/2012; · 10.77 Impact Factor
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ABSTRACT: We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.
Nanoscale 10/2012; · 5.91 Impact Factor
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ABSTRACT: We employ a ZnO nanorod/Si(3)N(4)-coated Si microgroove-based hierarchical structure (HS) for a light-harvesting scheme in 5 inch single crystalline Si solar cells. ZnO nanorods and Si microgrooves were fabricated by a simple and scalable aqueous process. The excellent light-harvesting characteristics of the HS, such as broadband working ranges and omnidirectionality have been demonstrated using external quantum efficiencies and reflectance measurements. The solar cells with the hierarchical surface exhibit excellent photovoltaic characteristics, i.e., a short-circuit current (J(SC)) of 38.45 mA cm(-2), open-circuit voltage of 609 mV and conversion efficiency of 14.04%. As incident angles increase from 0° to 60°, only 5.3% J(SC) loss is achieved by employing the hierarchical surface, demonstrating the enhanced omnidirectional photovoltaic performances, also confirmed by the theoretical analysis. A viable scheme for broadband and omnidirectional light harvesting using the HS employing microscale/nanoscale surface textures on single crystalline Si solar cells has been demonstrated.
Nanoscale 09/2012; 4(20):6520-6. · 5.91 Impact Factor
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ABSTRACT: We demonstrate a novel, feasible strategy for practical application of one-dimensional photodetectors by integrating a carbon nanotube and TiO(2) in a core-shell fashion for breaking the compromise between the photogain and the response/recovery speed. Radial Schottky barriers between carbon nanotube cores and TiO(2) shells and surface states at TiO(2) shell surface regulate electron transport and also facilitate the separation of photogenerated electrons and holes, leading to ultrahigh photogain (G = 1.4 × 10(4)) and the ultrashort response/recovery times (4.3/10.2 ms). Additionally, radial Schottky junction and defect band absorption broaden the detection range (UV-visible). The concept using metallic core oxide-shell geometry with radial Schottky barriers holds potential to pave a new way to realize nanostructured photodetectors for practical use.
ACS Nano 08/2012; 6(8):6687-92. · 10.77 Impact Factor
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ABSTRACT: We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10(-6)Ω cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.
Nanoscale 05/2012; 4(11):3399-404. · 5.91 Impact Factor
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ABSTRACT: We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
ACS Nano 04/2012; 6(5):4369-74. · 10.77 Impact Factor
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ABSTRACT: Single crystalline PbZr0.2Ti0.8 (PZT) nanowires arrays (NWAs) with taper morphology were epitaxially grown on SrTiO3 (STO) substrate using pulse laser deposition. The taper morphology was attributed to the overcoating of PZT layer via a lateral growth of PZT clusters/adatoms during PZT NW growth. The growth window for PZT film or nanowire was systematically studied at varied temperatures and pressures. The proposed growth mechanism of the taper PZT NWAs was investigated from a layer by layer growth via Frank–Van Der Merwe growth, followed by a formation of three-dimensional islands via Stranski–Krastanow growth, and then axial growth on the lowest energy (001) plane with growth direction of [001] via vapor–solid growth mechanism. However, under certain conditions such as at higher or lower pressure (>400 or <200 mTorr) or substrate temperatures (>850 °C and <725 °C), formation of the PZT NWs is suppressed while the epitaxial PZT thin film via the layer-by-layer growth remains. The controllable growth directions of the PZT NWAs on (001), (110), and (111) STO substrates were demonstrated. The piezopotential of the taper PZT NWAs using a conducting atomic force microscope with the average voltage output of 18 mV was measured. The theoretical piezopotential of a PZT NW was calculated to compare with the measured outputs, providing a comprehensively experimental and theoretical understanding of the piezoelectricity for the PZT NW.Keywords: pulsed laser deposition; PZT nanowire arrays; piezopotential; vapor-solid growth
03/2012;
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ABSTRACT: Antireflective Si/oxide core-shell nanowire arrays (NWAs) were fabricated by galvanic etching and subsequent annealing process. The excellent light-harvesting characteristics of the core-shell NWAs, such as broadband working ranges, omnidirectionality, and polarization-insensitivity, ascribed to the smooth index transition from air to the substrates, have been demonstrated. By tuning core-shell volume ratios, we obtained enhanced light trapping regions implemented in either the planar Si underneath NWAs or the core regions of NWAs, greatly benefiting the geometry design of planar and radial p-n junction cell structures, respectively. This photon management scheme indicates the potential use in nanostructured photovoltaic applications.
Optics Express 03/2012; 20 Suppl 2:A255-64. · 3.59 Impact Factor
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ABSTRACT: Single crystalline PbZr(0.2)Ti(0.8) (PZT) nanowires arrays (NWAs) with taper morphology were epitaxially grown on SrTiO(3) (STO) substrate using pulse laser deposition. The taper morphology was attributed to the overcoating of PZT layer via a lateral growth of PZT clusters/adatoms during PZT NW growth. The growth window for PZT film or nanowire was systematically studied at varied temperatures and pressures. The proposed growth mechanism of the taper PZT NWAs was investigated from a layer by layer growth via Frank-Van Der Merwe growth, followed by a formation of three-dimensional islands via Stranski-Krastanow growth, and then axial growth on the lowest energy (001) plane with growth direction of [001] via vapor-solid growth mechanism. However, under certain conditions such as at higher or lower pressure (>400 or <200 mTorr) or substrate temperatures (>850 °C and <725 °C), formation of the PZT NWs is suppressed while the epitaxial PZT thin film via the layer-by-layer growth remains. The controllable growth directions of the PZT NWAs on (001), (110), and (111) STO substrates were demonstrated. The piezopotential of the taper PZT NWAs using a conducting atomic force microscope with the average voltage output of ~18 mV was measured. The theoretical piezopotential of a PZT NW was calculated to compare with the measured outputs, providing a comprehensively experimental and theoretical understanding of the piezoelectricity for the PZT NW.
ACS Nano 02/2012; 6(3):2826-32. · 10.77 Impact Factor
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ABSTRACT: A combined method of modified oblique-angle deposition and hydrothermal growth was adopted to grow an optically anisotropic nanomaterial based on single crystalline ZnO nanowire arrays (NWAs) with highly oblique angles (75°-85°), exhibiting giant in-plane birefringence and optical polarization degree in emission. The in-plane birefringence of oblique-aligned ZnO NWAs is almost one order of magnitude higher than that of natural quartz. The strong optical anisotropy in emission due to the optical confinement was observed. The oblique-aligned NWAs not only allow important technological applications in passive photonic components but also benefit the development of the optoelectronic devices in polarized light sensing and emission.
Optics Express 01/2012; 20(3):2015-24. · 3.59 Impact Factor
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ABSTRACT: Large-area, periodic Si nanopillar arrays (NPAs) with the periodicity of 100 nm and the diameter of 60 nm were fabricated by metal-assisted chemical etching with anodic aluminum oxide as a patterning mask. The 100-nm-periodicity NPAs serve an antireflection function especially at the wavelengths of 200~400 nm, where the reflectance is decreased to be almost tenth of the value of the polished Si (from 62.9% to 7.9%). These NPAs show very low reflectance for broadband wavelengths and omnidirectional light incidence, attributed to the small periodicity and the stepped refractive index of NPA layers. The experimental results are confirmed by theoretical calculations. Raman scattering intensity was also found to be significantly increased with Si NPAs. The introduction of this industrial-scale self-assembly methodology for light
Optics Express 01/2012; 20(1):A94-103. · 3.59 Impact Factor
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ABSTRACT: A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO∕LaAlO3 (LAO)�∕p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO∕LAO∕p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO∕LAO∕p-Si PDs in the visible-blind UV PDs in a visible-light environment
Optics Lett. 01/2012; 37:1112.
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ABSTRACT: A novel strategy employing core-shell nanowire arrays (NWAs) consisting of Si/regioregular poly(3-hexylthiophene) (P3HT) was demonstrated to facilitate efficient light harvesting and exciton dissociation/charge collection for hybrid solar cells (HSCs). We experimentally demonstrate broadband and omnidirectional light-harvesting characteristics of core-shell NWA HSCs due to their subwavelength features, further supported by the simulation based on finite-difference time domain analysis. Meanwhile, core-shell geometry of NWA HSCs guarantees efficient charge separation since the thickness of the P3HT shells is comparable to the exciton diffusion length. Consequently, core-shell HSCs exhibit a 61% improvement of short-circuit current for a conversion efficiency (η) enhancement of 31.1% as compared to the P3HT-infiltrated Si NWA HSCs with layers forming a flat air/polymer cell interface. The improvement of crystal quality of P3HT shells due to the formation of ordering structure at Si interfaces after air mass 1.5 global (AM 1.5G) illumination was confirmed by transmission electron microscopy and Raman spectroscopy. The core-shell geometry with the interfacial improvement by AM 1.5G illumination promotes more efficient exciton dissociation and charge separation, leading to η improvement (∼140.6%) due to the considerable increase in V(oc) from 257 to 346 mV, J(sc) from 11.7 to 18.9 mA/cm(2), and FF from 32.2 to 35.2%, which is not observed in conventional P3HT-infiltrated Si NWA HSCs. The stability of the Si/P3HT core-shell NWA HSCs in air ambient was carefully examined. The core-shell geometry should be applicable to many other material systems of solar cells and thus holds high potential in third-generation solar cells.
ACS Nano 12/2011; 5(12):9501-10. · 10.77 Impact Factor
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ABSTRACT: Electronic structures of well-aligned Er-doped ZnO (ZnO:Er) nanorod arrays (NRAs) synthesized by a solution-based hydrothermal process were characterized by high-resolution transmission electron microscopy (HRTEM) and X-ray absorption fine structure (XAFS). HRTEM and angular dependent X-ray absorption near-edge structure analysis at O K and Zn L3 edges indicates that the spontaneous polarization is along the [0001] direction. The analysis of Er L3-edge XAFS demonstrates that the local structure around Er in the ZnO:Er NRAs was transformed from O(h) to C(4v), after annealing.
Journal of Nanoscience and Nanotechnology 12/2011; 11(12):10615-9. · 1.56 Impact Factor
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ABSTRACT: This work demonstrates high-temperature operation of metal-semiconductor-metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25 °C and from 4.9 to 7.6 at 200 °C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.
IEEE Electron Device Letters 12/2011; · 2.85 Impact Factor
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ABSTRACT: This study describes a strategy for developing ultra-high-responsivity broadband Si-based photodetectors (PDs) using ZnO nanorod arrays (NRAs). The ZnO NRAs grown by a low-temperature hydrothermal method with large growth area and high growth rate absorb the photons effectively in the UV region and provide refractive index matching between Si and air for the long-wavelength region, leading to 3 and 2 orders of magnitude increase in the responsivity of Si metal-semiconductor-metal PDs in the UV and visible/NIR regions, respectively. Significantly enhanced performances agree with the theoretical analysis based on the finite-difference time-domain method. These results clearly demonstrate that Si PDs combined with ZnO NRAs hold high potential in next-generation broadband PDs.
ACS Nano 09/2011; 5(10):7748-53. · 10.77 Impact Factor
