R-Ribeiro Andrade

Publications (3)1.56 Total impact

• Article: On the Ga interdiffusion in In As free-standing nanowires grown by molecular beam epitaxy

  R-Ribeiro Andrade, F. M. Matinaga, A. Malachias, M. V. B. Moreira, A. G. de Oliveira, J. C. Gonzalez, J Ihm, H Cheong
  Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. 01/2011; 1399.
• Source

  Available from: Juan C González

  Article: Direct evidences of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires.

  J C González, A Malachias, R-Ribeiro Andrade, J C de Sousa, M V B Moreira, A G de Oliveira
  [show abstract] [hide abstract]
  ABSTRACT: Direct evidences of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B are presented in this work. Scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of an In0.86Ga0.14As alloy. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
  Journal of Nanoscience and Nanotechnology 08/2009; 9(8):4673-8. · 1.56 Impact Factor
• Article: Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

  J. C. Gonz'alez, A. Malachias, J. C. de Sousa, R-Ribeiro Andrade, M.V.B. Moreira, A G de Oliveira
  [show abstract] [hide abstract]
  ABSTRACT: We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
  04/2008;