Publications (3)1.56 Total impact
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Article: On the Ga interdiffusion in In As free-standing nanowires grown by molecular beam epitaxy
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. 01/2011; 1399. -
Article: Direct evidences of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires.
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ABSTRACT: Direct evidences of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B are presented in this work. Scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of an In0.86Ga0.14As alloy. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.Journal of Nanoscience and Nanotechnology 08/2009; 9(8):4673-8. · 1.56 Impact Factor -
Article: Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires
[show abstract] [hide abstract]
ABSTRACT: We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.04/2008;