Publications (2)3.29 Total impact
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Article: Post-Growth Annealing Effects of Mg Doped GaAs Epitaxial Layers on Microstructural and Optical Properties
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ABSTRACT: The post-growth thermal annealing effects of Mg doped GaAs epitaxial layers on the microstructural and optical properties grown by molecular beam epitaxy (MBE) have been investigated. The properties of Mg doped GaAs are estimated after the process of rapid thermal annealing (RTA) in the temperature range of 600∼750 °C. The photoluminescence (PL) peak position of as-grown sample blueshifted from 1.473 to 1.485 eV as well as the pronounced enhancement in PL intensity by annealing at 600 °C. In the sample grown at the temperature of Ts = 475 °C, the full-width at half maximum (FWHM) of double crystal X-ray diffraction (DCXRD) decreased form 27 to 8 arcsec with increasing of annealing temperature (600∼700 °C). The crystalline quality variation of Mg doped GaAs layers by RTA is greatly dependent upon the doping level.Journal of Nanoscience and Nanotechnology 06/2009; 9(7):4207-4210. · 1.56 Impact Factor -
Article: Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy
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ABSTRACT: The electrical characteristics of magnesium (Mg)-doped GaAs epitaxial layers grown with different substrate temperatures have been investigated by Hall effect and capacitance–voltage (C–V) measurements at room temperature. The carrier concentration obtained by Hall measurements was decreased from 1.4×1019 to 3.4×1016 cm−3 when increasing the substrate temperature in the range 460–540 °C, and thus the maximum attainable doping density was NA–ND=1.4×1019 cm−3. The depth profiles of doping density, obtained by C–V measurements, show that carriers largely out-diffused toward the surface. This could be attributed to the surface segregation effect, which was predominant in the samples with a high doping density than those with a low doping density. Mg-doped GaAs layers have higher mobility than Be-doped GaAs layers around NA–ND=1018 cm−3. Thus, it is expected that Mg could be effectively used as p-type dopants for highly doped nanostructured semiconductors.Journal of Crystal Growth 310(10):2427-2431. · 1.73 Impact Factor
