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ABSTRACT: In this work, n-channel Multi-gate FET TiN nanocrystal memory using p<sup>+</sup> poly-Si gate and Al<sub>2</sub>O<sub>3</sub> high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 10<sup>4</sup> P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported.
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on; 05/2008