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Publications (3)0 Total impact

  • Source
    Conference Proceeding: A 3.1-8 GHz CMOS UWB front-end receiver.
    International Symposium on Circuits and Systems (ISCAS 2011), May 15-19 2011, Rio de Janeiro, Brazil; 01/2011
  • Article: Novel RF front-end design for low power UWB applications.
    Ali Meaamar
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    ABSTRACT: The needs for short range and fine resolution communications systems has motivated researchers to replace the wire-line communications systems with ultra-wideband communications systems. The ultra-wideband radio technology introduces significant advantages for short-range communications systems. This technology operates in a wide bandwidth, which allows for gigabit data rates over short distances. Due to the low complexity of the ultra-wideband system and low transmit power, it benefits from low DC power consumption. However, with growing demands for wireless communications systems, the ultra-wideband communications systems are facing more challenging requirements. Since the ultra-wideband covers a wide range of frequency, it causes challenges in the design of building blocks, in particular receiver front-end. The scope of this dissertation is to design a novel and innovative RF front-end receiver for the ultra-wideband transceivers using CMOS technology. A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-noise amplifier. The intrinsic parasitic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-noise amplifier with a bandwidth of 3−8 GHz, a maximum gain of 16.4 dB and noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-noise amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 μm CMOS technology. DOCTOR OF PHILOSOPHY (EEE)
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    Article: A 3-8 GHz low-noise CMOS amplifier.
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    ABSTRACT: A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 um CMOS technology. This design obtains a bandwidth of 3–8 GHz with a power consumption of 3.77 mW from a 1.8 V supply. Published version