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G. Llosa,
R. Battiston,
N. Belcari,
M. Boscardin,
G. Collazuol,
F. Corsi,
G.-F. Dalla Betta,
A. Del Guerra,
N. Dinu,
G. Levi,
S. Marcatili,
S. Moehrs,
C. Marzocca,
C. Piemonte, A. Pozza
[show abstract]
[hide abstract]
ABSTRACT: Silicon photomultipliers (SiPMs) with quantum efficiency maximized for a wavelength between 420 and 470 nm have been developed at ITC-irst Trento (Italy), and are being tested for their application in the construction of a ultra high resolution small animal PET tomograph. The devices have an area of 1 mm times 1 mm and 625 microcells. The breakdown voltage is around 30 V, and the gain of the order of 10<sup>6</sup>. The intrinsic timing resolution is 70 ps rms at the single photoelectron level. The first tests as readout for scintillators show an energy resolution of 21% FWHM with Na-22 employing LSO crystals. The first matrices of SiPMs have been produced and are being tested.
IEEE Transactions on Nuclear Science 07/2008; · 1.45 Impact Factor
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C. Piemonte,
R. Battiston,
M. Boscardin,
G. Collazuol,
F. Corsi,
G.-F. Dalla Betta,
A. Del Guerra,
N. Dinu,
G. Levi,
G. Llosa,
S. Marcatili,
C. Marzocca, A. Pozza,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency.
Nuclear Science Symposium Conference Record, 2006. IEEE; 12/2006
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G. Llosa,
R. Battiston,
M.G. Bisogni,
M. Boscardin,
G. Collazuol,
F. Corsi,
G.F. Dalla Betta,
A. Del Guerra,
N. Dinu,
G. Levi,
S. Marcatili,
S. Moehrs,
C. Marzocca,
C. Piemonte, A. Pozza,
C. Sbarra,
L. Quadrani
[show abstract]
[hide abstract]
ABSTRACT: Silicon photomultipliers (SiPMs) with quantum efficiency maximized for a wavelength between 420 and 470 nm have been developed at ITC-irst Trento (Italy), and are being tested for their application in the construction of a ultra high resolution small animal PET tomograph. The devices have an area of 1 mm times 1 mm and 625 microcells. The breakdown voltage is around 30 V, and the gain of the order of 10<sup>6</sup>. The intrinsic timing resolution is 70 ps rms at the single photoelectron level. The first tests as readout for scintillators show an energy resolution of 21 % FWHM with Na-22 employing LSO crystals. The first matrices of SiPMs have been produced and are being tested.
Nuclear Science Symposium Conference Record, 2006. IEEE; 12/2006
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M. Moll,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P P Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabash,
A. Barcz, [......],
S Worm,
V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10(35) cm(-2) s(-1) Will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented. (c) 2005 Elsevier B.V. All rights reserved.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 05/2005; 546:99-107. · 1.21 Impact Factor
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E. Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P.P. Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabash,
A. Barcz, [......],
S. Worm,
V. Wright,
R. Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V. Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 05/2005; 552:7-19. · 1.21 Impact Factor
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E Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
PP Allport,
M. Artuso,
S. Assouak,
BS Avset,
L. Barabashi,
A. Barcz, [......],
S Worm,
V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
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H.F.-W. Sadrozinski,
C. Betancourt,
R. Heffern,
I. Henderson,
J. Pixley,
A. Polyakov,
M. Wilder,
M. Boscardin,
C. Piemonte, A. Pozza,
N. Zorzi,
G.-F. Dalla Betta,
G. Resta,
M. Bruzzi,
A. Macchiolo,
L. Borrello,
A. Messineo,
D. Creanza,
N. Manna
[show abstract]
[hide abstract]
ABSTRACT: Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 °C, and large effects on the surface parameters observed.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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N. Dinu,
R. Battiston,
M. Boscardin,
G. Collazuol,
F. Corsi,
G.F. Dalla Betta,
A. Del Guerra,
G. Llosá,
M. Ionica,
G. Levi,
S. Marcatili,
C. Marzocca,
C. Piemonte,
G. Pignatel, A. Pozza,
L. Quadrani,
C. Sbarra,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: In the frame of INFN-ITC-irst collaboration new Silicon PhotoMultiplier (SiPM) prototypes have been produced at ITC-irst (Trento, Italy). Each SiPM covers an area of 1 mm2 and brings together 625 micro-cells of 40×40 μm2 size connected in parallel as to form a single read-out element. Each micro-cell consists of a Geiger Mode Avalanche Photodiode (GM-APD) in series with its quenching resistance. This article reports the main characteristics of these prototypes as well as the ongoing activity of our collaboration on the development of SiPM devices for medical and space physics applications.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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M. Scaringella,
A. Polyakov,
H.F.-W. Sadrozinski,
M. Bruzzi,
C. Tosi,
M. Boscardin,
C. Piemonte, A. Pozza,
S. Ronchin,
N. Zorzi,
G.-F. Dalla Betta
[show abstract]
[hide abstract]
ABSTRACT: We report on charge collection studies on 3D silicon detectors of single-type column n-diffusions in p-substrate, configured either as strip or as pad detectors. The charge is generated by penetrating beta particles from a 90Sr source which, together with a scintillation counter, serves as an electron telescope. The charge collection as a function of bias voltage is compared with the depletion thickness derived from the measured C–V characteristics.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 579(2):638-641. · 1.21 Impact Factor
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V. Radicci,
L. Borrello,
M. Boscardin,
M. Bruzzi,
D. Creanza,
G.F. Dalla Betta, M. de Palma,
E. Focardi,
A. Macchiolo,
N. Manna,
D. Menichelli,
A. Messineo,
C. Piemonte, A. Pozza,
M. Scaringella,
G. Segneri,
D. Sentenac,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karlsruhe) up to a fluence of 5×1015 1 MeV-neutron-equivalent/cm2. All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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T. Ehrich,
S. Kühn,
M. Boscardin,
G.-F. Dalla Betta,
S. Eckert,
K. Jakobs,
M. Maaßen,
U. Parzefall,
C. Piemonte, A. Pozza,
S. Ronchin,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: In this paper measurements of a 3D single-type column (3D-stc) microstrip silicon device are shown. The 3D-stc sensor has n-type columns in p-type substrate. It has been connected to an ATLAS SCT ABCD3T chip and is readout with ATLAS SCT electronics at 40 MHz. Spatial measurements were done with a laser setup to investigate the expected low field region in 3D devices. An influence of the p-stops on the collected charge has been observed.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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D. Creanza,
D. Bassignana,
L. Borrello,
M. Boscardin,
M. Bruzzi, M. de Palma,
E. Focardi,
A. Macchiolo,
N. Manna,
D. Menichelli,
A. Messineo,
C. Piemonte, A. Pozza,
V. Radicci,
M. Scaringella,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: We report on the processing and characterization of microstrip sensors and pad detectors produced on n- and p-type Magnetic Czochralski (MCz), Epitaxial (EPI) and Float Zone (FZ) silicon within the SMART project to develop radiation-hard silicon position sensitive detectors for future colliders. Each wafer contains 10 microstrip sensors with different geometries, several diodes and test structures. The isolation in the strip detectors produced on p-type material has been achieved by means of a uniform p-spray implantation, with doping of 3×1012 cm−2 (low-dose p-spray) and 5×1012 cm−2 (high-dose p-spray). The samples have undergone irradiations with 26 MeV protons and reactor neutrons up to ∼1016 cm−2 1 MeV equivalent neutrons (neq/cm2), and have been completely characterized before and after irradiation in terms of leakage current, depletion voltage and breakdown voltage. The current damage parameter α has been determined for all substrates. MCz diodes show less pronounced dependence of effective doping concentration Neff on the fluence when compared to standard FZ silicon, giving results comparable to diffusion oxygenated FZ devices for all irradiation sources. The observed increase of Neff with fluence can be interpreted in EPI material as a net donor introduction process, overcompensating the usual acceptor introduction process. This effect is stronger for 26 MeV proton irradiation than for neutron irradiation.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 579(2):608-613. · 1.21 Impact Factor
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E Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P P Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabashi,
A. Barcz, [......],
S Worm,
V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10(16) hadrons/cm(2). Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed. (c) 2005 Elsevier B.V. All rights reserved.
Physics Research Publications.
-
M. Moll,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P.P. Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabash,
A. Barcz, [......],
S. Worm,
V. Wright,
R. Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V. Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm−2 s−1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
-
[show abstract]
[hide abstract]
ABSTRACT: The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about , hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns—etched into the silicon bulk—are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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G. Collazuol,
G. Ambrosi,
M. Boscardin,
F. Corsi,
G.F. Dalla Betta,
A. Del Guerra,
N. Dinu,
M. Galimberti,
D. Giulietti,
L.A. Gizzi,
L. Labate,
G. Llosa,
S. Marcatili,
F. Morsani,
C. Piemonte, A. Pozza,
L. Zaccarelli,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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M. Zavrtanik,
V. Cindro,
G. Kramberger,
J. Langus,
I. Mandic,
M. Mikuz,
M. Boscardin,
G.F. Dalla Betta,
C. Piemonte, A. Pozza,
S. Ronchin,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: Position sensitive transient current technique (TCT) evaluation of irradiated 3D single column type detectors is presented. The detectors produced by ITC-irst were irradiated with neutrons to 1times10<sup>14</sup> , 5times10<sup>14</sup> and 5times10<sup>15</sup> ncm<sup>-2</sup> . A pulsed IR laser light focused to a spot of 6 mum and scanned over the entire detector with 0.5 mum resolution is used to create electron hole pairs throughout the detector simulating m.i.p. For each laser beam position the induced current shape is measured for three neighboring channels. Charge collection and sharing, current pulse shape and timing properties are studied as a function of position, voltage and fluence.
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE;
