Xiaojian Li

Publications (2)2.32 Total impact

• Source

  Available from: ac.at

  Conference Proceeding: Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance

  Liu Yang, Xiaojian Li, Lilin Tian, Zhiping Yu
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  ABSTRACT: The impact of STI stress with layout dependency on circuit performance is investigated. A 3D stress simulator has been developed using finite element method, which considers both the layout design and process information (PDK). The mobility change due to stress is included in the transistor modeling for circuit simulation. The circuit performance can thus be analyzed with nonlocal stress. As a test case, a buffered SR flip-flop was simulated with and without STI stress considered. It can be seen that STI stress has non-negligible influence on the circuit performance.
  Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on; 10/2009
• Article: Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

  Yaohua Tan, Xiaojian Li, Lilin Tian, Zhiping Yu
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  ABSTRACT: It was experimentally and numerically indicated that both the valley splitting and effective-mass variation contribute to the stress-induced enhancement of electron mobility in the MOSFET channel. In this paper, an analytical electron-mobility model for arbitrarily strained silicon is presented. The electron-mobility model includes the strain effects of both the effective-mass variation and valley degeneration. The expression of strained conduction band used in the analytical model is based on the theory and accords well with numerical results of nonlocal empirical pseudopotential method (EPM). By using the mobility model, mobilities under different stresses are investigated.
  IEEE Transactions on Electron Devices 07/2008; · 2.32 Impact Factor