R.J. Mears,
M. Hytha,
I. Dukovski,
A. Yiptong,
Xiangyang Huang,
S. Halilov,
A. Broka,
R.J. Stephenson, Vivek Rao,
D.R. Webb, [......],
S.A. Kreps,
H. Takeuchi,
S. Ikeda,
G. Gebara,
K. Matthews,
J.T. Wetzel,
Wade Xiong,
C. Bowen,
R. Wise,
C.R. Cleavelin
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ABSTRACT: In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.
SOI Conference, 2007 IEEE International; 11/2007
