P. Barbera

Publications (2)0 Total impact

• Source

  Available from: Cristina Garozzo

  Conference Proceeding: Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

  S. Lombardo, C. Gerardi, L. Breuil, C. Jahan, L. Perniola, G. Cina, D. Corso, E. Tripiciano, V. Ancarani, G. Iannaccone, [......], P. Barbera, E. Nowak, R. Puglisi, G.A. Costa, C. Coccorese, M. Vecchio, E. Rimini, J. Van Houdt, B. De Salvo, M. Melanotte
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  ABSTRACT: Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated.
  Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
• Source

  Available from: Cristina Garozzo

  Conference Proceeding: Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

  C. Gerardi, S. Lombardo, G. Cina, E. Tripiciano, D. Corso, V. Ancarani, G. Lacono, C. Bongiorno, C. Garozzo, P. Barbera, G.A. Costa, C. Coccorese, M. Vecchio, E. Rimini, M. Melanotte
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  ABSTRACT: In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.
  Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE; 09/2007