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ABSTRACT: We present a cost-efficient parallel optical transceiver module based on a 1×4 VCSEL array, a 1×4 PD array, and a 12-wide
multimode fiber ribbon for very-short-reach application. A passive alignment technique using through-silicon-hole (TSH) has
been developed to realize high-efficient butt-coupling between optoelectronic arrays and multimode fibers. In this paper,
the detail optical coupling structure, misalignment tolerance, micro-assembly process, and measurement results are mainly
discussed. Finally, lensed multimode fibers formed by chemical etching are proposed, which exhibit a great potential for further
improvement of coupling performance.
Applied Physics A 04/2012; 95(4):1123-1128. · 1.63 Impact Factor
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Wei Gao,
Zhihua Li,
Jian Song,
Xu Zhang,
Feng Chen,
Fengman Liu,
Yunyan Zhou,
Jun Li,
Haifei Xiang,
Jing Zhou,
Shuhua Liu,
Yu Wang,
Qidong Wang,
Baoxia Li,
Zhan Shi,
Liqiang Cao, Lixi Wan
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ABSTRACT: This paper presents an electrical design of a 6.25Gbps×12-channel parallel optical transceiver with SiP packaging technology. Considering such high speed, a low impedance and low noise power distribution network (PDN) is designed to suppress simultaneous switching noise (SSN) and a novel embedded capacitor filter is used to replace the conventional power supply filter. To minimize the impedance discontinuity of electrical channels, a signal integrity (SI) design flow based on Electromagnetic Analysis Method and Circuit Analysis Method is proposed. Following this design flow, the high speed link performs on a large bandwidth. With the electrical design, the optical transceiver is fabricated and tested.
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th; 07/2010
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ABSTRACT: The fabrication process of a 12-channel parallel optical transceiver module developed in our group is presented in this paper. The module is composed of a VCSEL array, a PIN PD array, a VCSEL driver chip, a TIA/LA chip and supporting PCB and connector. A SiOB and its vertical assembly are emphasized as the highlights of the structure of this module, which is promising to effectively reduce the package cost and improve the optical coupling efficiency.
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on; 09/2009
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ABSTRACT: Power integrity (PI) simulation for system-in-package (SiP) is a bottleneck in SiP design flow. This paper presents a novel numerical algorithm for PI simulation in packaging structures. This algorithm is based on 2D generalized transmission line equation (GTLE), finite difference frequency domain (FDFD) and mesh division technique. The power distribution network is simulated using mesh division technique where the model of power distribution network is obtained by regarding each cell as a 2D transmission line. 2D GTLE is a group partial equation about voltage and current density distribution on a power/ground plane pair. After reduction, the voltage equation for 2D GTLE is obtained, which is a Helmholtz equation. One method to solve the Helmholtz equation is by the finite-difference scheme. The 2D Laplace operator can be approximated to solve the voltage equation. In this paper, the fringe effect is modeled by the addition of cells around edges which is efficient and easy to implement. Finally, the methodology described in prior sections has been implemented in a CAD tool. The results from our method were compared to those from a full-wave simulator to show efficiency in power integrity simulation.
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on; 09/2009
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Lixi Wan
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ABSTRACT: “System-in-Package”(SiP) and “System-on-Package” (SoP) are different but similar in concepts. SiP and SoP definition were found in many open sources. SoP promises much more technologies and functions over SiP, leads to too many and more complicated research areas, and long time to develop, which could lost patience and interest from industry. Module-in-Package(MiP) was proposed as a replacement of SoP for real implementations.
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on; 08/2008
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ABSTRACT: This paper presents a novel lowpass filter with an embedded capacitor which can substitute conventional filter network and suppress switching noise with a large bandwidth in Multi-GHz PCBs. A new design methodology of the low pass filter network is proposed. A new SPICE model of embedded capacitor based on Transmission Line Theory is built and a comparison between H-spice and GTLE is used to illuminate its validity. With the model and Finite Elements Method, the feature of the embedded capacitor, in which different frequency modes were excited by special exciting positions, was studied and the design procedure of an ECF was developed. As an application example, a typical power supply filter network and its replacement, an embedded capacitor with a 100uF SMD capacitor, were studied.
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on; 08/2008
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ABSTRACT: ZnO as an excellent candidate for UV light emitters, varistors, transparent high-power electronics, surface acoustic wave devices, piezoelectric transducers, and chemical and gas sensors could be integrated in a SiP (system-in-package). The SiP could be a critical part in sensor nodes in a sensor network. Normally, the ZnO device in SiP is fabricated with nanoscale films which can be compatible with other materials and processing in a package. However, despite the great potential for electron and photonic applications, ZnO device fabrication is difficult to obtain good ohmic contact. The low resistance and thermal stable ohmic contacts is critical to realize high-performance ZnO-based devices. In this paper, the recent advances of ohmic contacts on ZnO are analyzed and reviewed. The mechanism of the energy band bending at the interface of the semiconductor and the metal is discussed. The factors of forming good quality ZnO films such as the choice of the substrate and the method to deposit ZnO film, the effect of the contact resistance and thermal stability of ohmic contacts are summarized.
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on; 08/2008
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ABSTRACT: A compact 4times2-channel parallel optical MCM transceiver with data rates up to 3.125 Gb/s per channel was studied for very short reach (VSR) interconnection. The transceiver was based on 1times4 VCSEL and PD arrays of 850 nm wavelength, and a 12-fiber-ribbon as the transmission medium. Greatly relaxed alignment tolerance and high coupling efficiency between optoelectronic (OE) device arrays and fiber arrays were achieved. The eye-diagram at 2.5 Gb/s was measured under 2<sup>31</sup>-1 pseudorandom bit stream (PRBS).
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on; 08/2008
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ABSTRACT: Edge-view photodetector (EVPD) is a new semiconductor photodetector with 3-D structure for simple optical assembly and packaging. In this paper, the equivalent R-L-C circuit model of EVPD was built and the R-L-C values were obtained by fitting the model S parameters to the measurement. A commercial P-I-N photodetector was also studied with the same approach and the R-L-C values were compared with those of EVPD. As a result, the series resistance, capacitance and inductance of EVPD were much higher than that of the PIN PD. It may be a reason of the poorer frequency properties of EVPD. To improve the EVPD performance, the material growth of I layer, Ohm contact process and anode process were suggested to be optimized in the future work.
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on; 08/2008
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ABSTRACT: A new semiconductor photodetector design is reported. The PIN active area of the photodetector is fabricated on a sloping sidewall of a mesa structure. The photodetector is referred to as an edge-view photodetector (EVPD) and simplifies the integration of optical circuits by direct end coupling, eliminating the need for 45 degrees mirrors. The EVPD geometry can reduce the cost of optical interconnects by simplifying the fabrication process and making possible automatic alignment between photodetectors and waveguides or optical fibers. The EVPD fabrication process and initial measurement results are presented. The main processing steps include deep anisotropic chemical etching, material growth, and lithography on a 3-D surface.
Optics Letters 11/2007; 32(20):2906-8. · 3.40 Impact Factor
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ABSTRACT: A new 850 nm edge-view-photodetector (EVPD) was designed, fabricated and measured. The EVPD is designed to simplify optical packagings in an optical interconnects system by eliminating the using of turning mirrors and microlenses. The PIN active area of the photodetector is fabricated on a sloping sidewall of mesa structures. The resulting photodetector becomes edge viewing while the electrical pads remain horizontal. The EVPD fabrication process and initial measurement results are presented in this letter. The main processing steps include deep anisotropic chemical etching, material growth on slope and lithography on 3-D micro structure.
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on; 09/2007
