Publications (1)0 Total impact
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Conference Proceeding: Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC
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ABSTRACT: A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times10<sup>15</sup> protons/cm<sup>2</sup> (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.Radiation Effects Data Workshop, 2007 IEEE; 08/2007
Institutions
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2007
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Southern Methodist University
- Department of Physics
Dallas, TX, USA
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