Han Li

Publications (2)1.47 Total impact

• Article: Improved Thermoelectric Performance and Mechanical Properties of Nanostructured Melt-Spun β-Zn4Sb3

  Dekui Qi, Xinfeng Tang, Han Li, Yonggao Yan, Qingjie Zhang
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  ABSTRACT: β-Zn4Sb3 is one of the most important thermoelectric materials in the intermediate temperature range, but poor mechanical properties limit its commercial application. In this work we adopted a melt-spinning (MS) technique followed by a quick spark plasma sintering (SPS) procedure to fabricate nanostructured β-Zn4Sb3 bulk material with good thermoelectric performance and mechanical properties. The nanostructure had a significant influence on the thermoelectric transport properties and mechanical strength. Compared with the sample prepared by the traditional melting method (M-ingot), the Seebeck coefficient of the MS-SPS samples was significantly higher and the thermal conductivity was remarkably lower. In spite of the lower electrical conductivity, the σ/κ ratio increased in the high temperature range, leading to great improvement in the thermoelectric figure of merit (ZT). The maximum ZT value of 1.16 was obtained at 700K for the MS-SPS-40 sample. Compared with the M-ingot sample, it was 47% higher at the same temperature. Moreover, the average compressive strength of the MS-SPS-40 sample reached 337.9MPa, which is 130% higher than that of the M-ingot sample. β-Zn4Sb3 with such high mechanical strength has great potential for commercial application. Keywords β-Zn4Sb3 -melt-spinning-thermoelectric-mechanical properties
  Journal of Electronic Materials 04/2012; 39(8):1159-1165. · 1.47 Impact Factor
• Conference Proceeding: Synthesis and electrical transport properties of p-type Ba 8 Ga 16 Cd x Ge 30−x type-I clathrates

  Shukang Deng, Xinfeng Tang, Han Li, Yonggao Yan, Qingjie Zhang
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  ABSTRACT: P-type Ba₈Ga₁₆Cd_xGe_30-x (x=0.95, 1.00, 1.05, 1.10) type-I clathrates with different Cd contents were synthesized by combining melt method with spark plasma sintering (SPS). The effects of Cd content on electrical transport properties have been investigated. The results show that all samples exhibit p-type conduction. The Seebeck coefficient alpha and room temperature carrier mobility mu_H decrease with the increasing Cd content. The electrical conductivity sigma and the room temperature carrier concentration N_p increase with the increase of Cd content. In the low temperature range (T<150 K), the carrier scattering mechanism is mainly ionized impurity mechanism, and gradually changes to an acoustical mechanism with the rising temperature. The maximum power factor value of 0.35times10^-3 Wm^-1K^-2 is obtained at 550 K for Ba₈Ga₁₆Cd_1.00Ge_29.00.
  Thermoelectrics, 2007. ICT 2007. 26th International Conference on; 07/2007