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ABSTRACT: High-kappa HfO<sub>2</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> multilayer quantum well (MQW) charge storage devices with a large memory window of DeltaV<sub>t</sub>ap8.1 V, an excellent endurance and a good retention (~9% charge loss at 20degC) are reported. Both program and erase speeds of DeltaV<sub>t</sub>>3 V@100 mus are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-kappa Al<sub>2</sub>O<sub>3</sub> as a blocking oxide and high work function metal gate show low leakage current density of ~2.4times10<sup>-7</sup> A/cm<sup>2</sup>@V<sub>g</sub>=-5 V at 125degC and high program/erase speed of DeltaV<sub>FB</sub>>2 V@10 mus with a low operation voltage of V<sub>g</sub><5 V.
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on; 05/2007