S.S. Tseng

National Central University, Taoyuan City, Taiwan, Taiwan

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Publications (4)5.55 Total impact

  • I.H. Chen, S.S. Tseng, Pei-Wen Li
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    ABSTRACT: We investigated temperature-dependent ( 300 K - 120 K ) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.
    IEEE Photonics Technology Letters 12/2009; · 2.04 Impact Factor
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    S. S. Tseng, I. H. Chen, P. W. Li
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    ABSTRACT: Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. Under 405–450 nm light illumination, Ge QDs poly-Si TFTs exhibit not only strong photoresponses in the drive current but also much improved subthreshold characteristics than that measured in darkness. This originates from the fact that only photoexcited holes within Ge QDs are injected into the active channel via vertical electric field and contribute excess mobile carriers for photocurrent but without the associated photogenerated electron induced junction barrier lowering.
    Applied Physics Letters 11/2008; 93(19):191112-191112-3. · 3.52 Impact Factor
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    ABSTRACT: High-kappa HfO<sub>2</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> multilayer quantum well (MQW) charge storage devices with a large memory window of DeltaV<sub>t</sub>ap8.1 V, an excellent endurance and a good retention (~9% charge loss at 20degC) are reported. Both program and erase speeds of DeltaV<sub>t</sub>>3 V@100 mus are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-kappa Al<sub>2</sub>O<sub>3</sub> as a blocking oxide and high work function metal gate show low leakage current density of ~2.4times10<sup>-7</sup> A/cm<sup>2</sup>@V<sub>g</sub>=-5 V at 125degC and high program/erase speed of DeltaV<sub>FB</sub>>2 V@10 mus with a low operation voltage of V<sub>g</sub><5 V.
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on; 05/2007
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    ABSTRACT: A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si 0.95 Ge 0.05 /Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.