Xiushan Wu

Southeast University (China), Nan-ching-hsü, Jiangxi Sheng, China

Are you Xiushan Wu?

Claim your profile

Publications (3)0 Total impact

  • Jun Xia · Zhigong Wang · Xiushan Wu · Wei Li ·
    [Show abstract] [Hide abstract]
    ABSTRACT: The implementation of broadband monolithic baluns based on CMOS technology is investigated. The configuration and parameterized layout are analyzed. Then, a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted, with high accuracy in a broadband frequency range, via combination of physical formula and fitting optimization. Two baluns were implemented with TSMC's one-poly eight-metal (1P8M) 0.13 m mixed-signal (MS)/RF CMOS process. The S-parameters of these two baluns were measured using a vector network analyzer. The measured results agree well with the modeled parameters up to millimeter-wave frequencies.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 01/2008; 29(3):467-472.
  • Xiushan Wu · Xiaoyan Shen · Zhigong Wang · Qing Li ·
    [Show abstract] [Hide abstract]
    ABSTRACT: Based on the noise parameter expressions of the proposed CMOS LNA topology, the design principles, advantages, and limitations of the power-constrained simultaneous noise and input matching technique are discussed. As a demonstration for the proposed design principle, a 433 MHz low-power CMOS LNA is implemented in SMIC's 0.18 mum CMOS technology. Measured results show a good agreement with the proposed design principle and theoretical analysis.
  • Xiushan Wu · Ling Sun · Zhigong Wang ·
    [Show abstract] [Hide abstract]
    ABSTRACT: According to the definition of noise figure, this paper presents a detailed analysis of the noise parameter of a low noise amplified (LNA) in a CMOS cascode topology with the source degeneration inductance and gate shunt capacitance. Based on the derived equations, the important application of this topology is discussed and a low power UHF CMOS LNA is optimized for RFID. The simulated results show a noise figure of 0.7dB, a power gain of 12.5dB, and an IIP3 of -4dBm while dissipating 2.1mA from a 1.8V supply. As a result, very low noise figures become possible already at very low power consumption levels.
    Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on; 05/2007