W. C. Wu

Publications (2)2.68 Total impact

• Article: SPDT GaAs Switches With Copper Metallized Interconnects

  Y. C. Wu, E. Y. Chang, Y. C. Lin, H. T. Hsu, S. H. Chen, W. C. Wu, L. H. Chu, C. Y. Chang
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  ABSTRACT: Copper metallized AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5dB, isolation larger than 35dB and the input power for one dB compression (input P_1dB) of 27dBm at 2.5GHz. These switches were annealed at 250deg for 20h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability
  IEEE Microwave and Wireless Components Letters 03/2007; · 1.72 Impact Factor
• Article: 60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging

  W.C. Wu, L.H. Hsu, E.Y. Chang, J.P. Starski, H. Zirath
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  ABSTRACT: The RF-via interconnect structure from the 0- to the 1-level package for coplanar RF-MEMS devices packaging is evaluated. The 0/1-level interconnect structure was designed and optimised using the electromagnetic simulation tool. The structure was then successfully fabricated and characterised up to 67 GHz. The measured and simulated results show good agreement, demonstrating DC-to-60 GHz broadband interconnect performance through the two levels package with return loss below 15 dB and insertion loss within 0.6 dB.
  Electronics Letters 02/2007; · 0.96 Impact Factor