Y. C. Wu

National Chiao Tung University, Hsinchu, Taiwan, Taiwan

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Publications (2)1.78 Total impact

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    ABSTRACT: Copper metallized AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5dB, isolation larger than 35dB and the input power for one dB compression (input P<sub>1dB </sub>) of 27dBm at 2.5GHz. These switches were annealed at 250deg for 20h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability
    IEEE Microwave and Wireless Components Letters 03/2007; · 1.78 Impact Factor
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    ABSTRACT: Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) Single-Pole-Double-Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as ∂V th /∂T, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and high-temperature RF characteristics, shows good microwave performance and material stability for high temperature applications.