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ABSTRACT: We investigate the linearity properties of silicon modulators and show that, contrary to the traditional lithium niobate Mach-Zehnder modulators (MZMs), the third-order intermodulation distortion (IMD3) for silicon modulators is a function of the modulator bias point. The bias point for silicon modulators can be chosen to reduce the IMD3 well below that of standard lithium niobate MZMs. Given the cost and integration advantages of the silicon photonics technology, silicon modulators offer significant advantages for emerging radio over fiber applications. As an example, we examine, for the first time to our knowledge, a silicon modulator for converting analog 802.11 RF signals to the optical domain, achieving an error vector magnitude of -30 dB.
IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 3.78 Impact Factor
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ABSTRACT: We review recent advances in the development of silicon photonic integrated circuits for high-speed and high-capacity interconnect applications. We present detailed design, fabrication, and characterization of a silicon integrated chip based on wavelength division multiplexing. In such a chip, an array of eight high-speed silicon optical modulators is monolithically integrated with a silicon-based demultiplexer and a multiplexer. We demonstrate that each optical channel operates at 25 Gb/s. Our measurements suggest the integrated chip is capable of transmitting data at an aggregate rate of 200 Gb/s. This represents a key milestone on the way for fabricating terabit per second transceiver chips to meet the demand of future terascale computing.
IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 3.78 Impact Factor
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ABSTRACT: We review recent results of silicon photonic component research and photonic integration on silicon platform. In particular, we present design, fabrication, and characterization of a high-speed photonic integrated circuit that is capable of transmitting data at 200 Gb/s.
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia; 12/2008
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ABSTRACT: We report a silicon photonic integrated circuit that contains a fast silicon optical modulator array and wavelength multiplexer/de-multiplexer. We demonstrate high-speed data transmission with an aggregate data rate of 200 Gbps on a single silicon chip.
Group IV Photonics, 2008 5th IEEE International Conference on; 10/2008
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ABSTRACT: We review silicon photonic technologies enabling low-cost photonic integrated circuits (PIC) for future optical interconnects. In particular, we discuss design, fabrication, and characterization of a high-speed silicon optical modulator capable of transmitting data up to 30 Gbps.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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ABSTRACT: A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based on carrier depletion of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of ~30 GHz and can transmit data up to 40 Gbit/s.
Electronics Letters 02/2007; · 0.96 Impact Factor
