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Publications (3)1.7 Total impact

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    ABSTRACT: A cost-effective isolation technique using laser treatment is proposed to suppress the undesired crosstalk between dual power amplifiers (PAs), which are essential to multiple-input multiple-output communications system. Laser treatment not only reduces the small-signal coupling between dual PAs but also enhances the linearity of the PA under dual-PA operation mode. The figure of merit for the small-signal coupling has an improvement of 4.55 dB at 2.45 GHz, and the output power at 3% (- 30 dB) error vector magnitude (EVM) has a linearity improvement of 6.1 dB under 0-dB interference.
    IEEE Microwave and Wireless Components Letters 10/2008; 18(9-18):602 - 604. DOI:10.1109/LMWC.2008.2002456 · 1.70 Impact Factor
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    ABSTRACT: A differential power combining method for general power amplifiers (PAs) with combining and matching network using lumped components is proposed for the first time. The proposed power combining technique greatly reduces board area at 1.95 GHz as compared to the traditional in-phase power combining method using transmission line, such as Wilkinson power combiners. The output matching is achieved with smaller impedance transformation ratio and the matching loss is reduced. The proposed SiGe PA with power combining technique achieves 28 dBm output power, 14 dB gain and 22.6% power-added efficiency (PAE) at 1.95 GHz with 1dB output power enhancement as compared to the single PA.
    Microwave Conference, 2006. APMC 2006. Asia-Pacific; 01/2007
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    ABSTRACT: The large-signal and small-signal coupling effects of dual SiGe power amplifiers (PAs) on a single chip for 802.11n multiple input multiple output (MIMO) applications are demonstrated for the first time. Deep trench isolation and grounded guard ring are used for crosstalk isolation at both transistor and circuit levels. The equivalent small-signal coupling at 2.45 GHz between two PAs is -30 dB. The PA delivers 18.1 dBm and 16.6 dBm with 3% EVM (OFDM, 64-QAM) in single and dual PA operation modes, respectively. The EVM degradation becomes severe as the relative interfering power level increases
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE; 07/2006