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ABSTRACT: ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B
buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires
or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111]
oriented cubic mixed with [0001] oriented hexagonal regions are obtained on
(111)B substrates. Most of the NWs are perpendicular to the surface in the last
case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as
demonstrated by transmission electron microscopy, energy filtered TEM and high
angle annular dark field scanning TEM measurements.
07/2012;
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ABSTRACT: High angle annular dark field scanning transmission electron microscopy is
used to analyze the polarity of ZnSe nanowires grown, by molecular beam
epitaxy, on GaAs substrates. The experimental results are compared to simulated
images in order to verify possible experimental artefacts. In this work we show
that for this type of nano-objects, a residual tilt of the specimen below 15
mrad, away from the crystallographic zone axis does not impair the
interpretation of the experimental images.
07/2012;
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ABSTRACT: Spectral diffusion is a result of random spectral jumps of a narrow line as a
result of a fluctuating environment. It is an important issue in spectroscopy,
because the observed spectral broadening prevents access to the intrinsic line
properties. However, its characteristic parameters provide local information on
the environment of a light emitter embedded in a solid matrix, or moving within
a fluid, leading to numerous applications in physics and biology. We present a
new experimental technique for measuring spectral diffusion based on photon
correlations within a spectral line. Autocorrelation on half of the line and
cross-correlation between the two halves give a quantitative value of the
spectral diffusion time, with a resolution only limited by the correlation
set-up. We have measured spectral diffusion of the photoluminescence of a
single light emitter with a time resolution of 90 ps, exceeding by four orders
of magnitude the best resolution reported to date.
07/2012;
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S Bounouar,
M Elouneg-Jamroz,
M den Hertog,
C Morchutt,
E Bellet-Amalric,
R André,
C Bougerol,
Y Genuist,
J-Ph Poizat, S Tatarenko,
K Kheng
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ABSTRACT: Epitaxial semiconductor quantum dots are particularly promising as realistic single-photon sources for their compatibility with manufacturing techniques and possibility to be implemented in compact devices. Here, we demonstrate for the first time single-photon emission up to room temperature from an epitaxial quantum dot inserted in a nanowire, namely a CdSe slice in a ZnSe nanowire. The exciton and biexciton lines can still be resolved at room temperature and the biexciton turns out to be the most appropriate transition for single-photon emission due to a large nonradiative decay of the bright exciton to dark exciton states. With an intrinsically short radiative decay time (≈300 ps) this system is the fastest room temperature single-photon emitter, allowing potentially gigahertz repetition rates.
Nano Letters 05/2012; 12(6):2977-81. · 13.20 Impact Factor
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ABSTRACT: We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots.
04/2009;
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ABSTRACT: Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $\Delta E = 6 $ meV between the dark and the bright exciton as well as the spin flip rates between these two states.
03/2009;
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ABSTRACT: We present the photoluminescence and time resolved photoluminescence properties of an ensemble of ZnTe quantum dots embedded in a ZnSe matrix. Those heterostructures exhibit a type-II band alignment with holes confined within the dots and electrons kept in the close vicinity of the dots by coulomb attraction. We show that the structural and optical features of the samples, grown by molecular beam epitaxy, are highly sensitive to the growth conditions. Depending on the Se to Zn flux ratio, the ZnTe islands can disappear and lead to a thin 2D quantum well, or be preserved and localize excitons, as evidenced by photoluminescence experiments. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
physica status solidi (c) 02/2009; 6(4):857 - 859.
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ABSTRACT: ZnSe nanowires heterostructures were grown by molecular beam epitaxy in the vapour–liquid–solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature nanoneedles are formed. For higher growth temperature, the nanowires have a high aspect ratio with sizes of 1–2 μm in length and 20–50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of the base of a nanoneedle allows us to obtain very narrow structures with a diameter less than 10 nm and a low density of stacking fault defects. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
physica status solidi (b) 02/2009; 246(4):812 - 815. · 1.32 Impact Factor
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ABSTRACT: We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.
Nano Letters 01/2009; 8(12):4326-9. · 13.20 Impact Factor
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ABSTRACT: We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.
Applied Physics Letters 10/2008; 93(14):143106-143106-3. · 3.84 Impact Factor
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[show abstract]
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ABSTRACT: ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 $\mu$m in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source.
09/2008;
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Matthieu Jamet,
André Barski,
Thibaut Devillers,
Valier Poydenot,
Romain Dujardin,
Pascale Bayle-Guillemaud,
Johan Rothman,
Edith Bellet-Amalric,
Alain Marty,
Joël Cibert,
Richard Mattana, Serge Tatarenko
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ABSTRACT: The emerging field of spintronics would be dramatically boosted if room-temperature ferromagnetism could be added to semiconductor nanostructures that are compatible with silicon technology. Here, we report a high-TC (>400K) ferromagnetic phase of (Ge,Mn) epitaxial layer. The manganese content is 6%, and careful structural and chemical analyses show that the Mn distribution is strongly inhomogeneous: we observe eutectoid growth of well-defined Mn-rich nanocolumns surrounded by a Mn-poor matrix. The average diameter of these nanocolumns is 3nm and their spacing is 10nm. Their composition is close to Ge(2)Mn, which corresponds to an unknown germanium-rich phase, and they have a uniaxially elongated diamond structure. Their Curie temperature is higher than 400K. Magnetotransport reveals a pronounced anomalous Hall effect up to room temperature. A giant positive magnetoresistance is measured from 7,000% at 30K to 200% at 300K and 9T, with no evidence of saturation.
Nature Material 08/2006; 5(8):653-9. · 32.84 Impact Factor
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ABSTRACT: The two-dimensional–three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.
Applied Physics Letters 06/2006; 88(23):233103-233103-3. · 3.84 Impact Factor
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ABSTRACT: Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominally identical samples can evolve into two-dimensional quantum well or quantum dot plane, depending on which element is in excess. Transmission electron microscopy, atomic force microscopy and optical characterizations evidence this phenomenon.
Materials Science and Engineering: B. 165:85-87.
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Matthieu Jamet,
André Barski,
Thibaut Devillers,
Valier Poydenot,
Romain Dujardin,
Pascale Bayle-Guillemaud,
Johan Rothman,
Edith Bellet-Amalric,
Alain Marty,
Joël Cibert,
Richard Mattana, Serge Tatarenko
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[show abstract]
[hide abstract]
ABSTRACT: Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $\Delta E = 6 $ meV between the dark and the bright exciton as well as the spin flip rates between these two states.
