L. Ciampolini

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Publications (3)0 Total impact

  • Conference Proceeding: Electrical characterization and compact modeling of MOSFET body effect
    V. Quenette, P. Lemoigne, D. Rideau, R. Clerc, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen
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    ABSTRACT: In this paper we report on the impact of the depth dopant profile on MOSFETs threshold voltage shifts induced by bulk biases. This body effect is characterized with an original procedure using experimental data, but also a series of TCAD simulations, including advanced process simulation of the dopant distribution along the depth of the transistor. Finally the impact of the doping profile non-uniformity on the body effect is accounted for within the framework of a charge sheet model.
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on; 04/2008
  • Conference Proceeding: A predictive analytical model of 3D MIM capacitors for RC IC
    N. Segura, S. Cremer, D. Gloria, L. Ciampolini, E. Picollet, M. Minondo
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    ABSTRACT: This paper reports a predictive analytical transmission RLC model of 3D MIM capacitors in a 0.13 mum BICMOS technology. The aim of this predictive model is to help circuit design with compatible CPU time. It allows adjusting process parameters in order to optimize electrical features. The model has been compared with electromagnetic simulations and S-parameters measurements up to 42 GHz.
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
  • Source
    Article: Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation
    D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti
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    ABSTRACT: The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the Local-Density-Approximation of Density-Functional Theory, including a GW correction and relativistic effects. The so-calculated band structure is then used to extract the unknown k.p fitting parameters with a conjugate-gradient optimization procedure. In a similar manner, the results of ab initio calculations for strained materials are used to fit the unknown deformation potentials that are included in the present k.p Hamiltonian following the Pikus and Bir correction scheme. We show that the present k.p model is an efficient numerical method, as far as computational time is concerned, that reproduces accurately the overall band structure, as well as the bulk effective density of states and the carrier effective masses, for both strained and unstrained materials. As an application, the present thirty-level k.p model is used to describe the band offsets and the variations of the carrier effective masses in a strained material, a Si(1-x)Gex/Si(1-y)Gey layer system.
    08/2006;
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