Srdjan Glisic

MEDAV GmbH, Stadt Ilmenau, Thuringia, Germany

Are you Srdjan Glisic?

Claim your profile

Publications (39)15.67 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level bonding process. The VCO operates at 82 GHz with 6 dBm output power and the combined circuit delivers $-10~{rm dBm}$ at 246 GHz, with a phase noise of $-87~{rm dBc}/{rm Hz}$ at 2 MHz offset. To the knowledge of the authors, this is the first hetero-integrated signal source in this frequency range reported so far. The results illustrate the potential of the hetero integrated process for sub-mm-wave frequencies.
    IEEE Microwave and Wireless Components Letters 07/2014; 24(7):469-471. DOI:10.1109/LMWC.2014.2316220 · 2.24 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled oscillators (VCOs) in BiCMOS, which drive frequency multiplier–amplifier chains in transferred-substrate (TS) InP-DHBT technology, heterogeneously integrated on top of the BiCMOS wafer in a wafer-level bonding process. Both circuits are biased through a single set of bias pads and compact low-loss transitions from BiCMOS to InP circuits and vice versa have been developed, which allows seamless signal routing through both technologies exhibiting 0.5 dB insertion loss up to 200 GHz. One VCO operates at 82 GHz with a tuning range of 600 MHz and an output power of approximately 8 dBm. A frequency doubler combined with this VCO circuit delivers 0 dBm at 164 GHz and a frequency tripler with a similar VCO delivers −10 dBm at 246 GHz. Another hetero-integrated W-band doubler–amplifier circuit demonstrates 12.9 dBm saturated output power with 5.9 dB conversion gain at 96 GHz. A direct comparison of the TS InP-DHBT MMIC with either silicon or traditional AlN carrier substrates shows the favorable properties of the hetero-integrated process discussed here. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.
    International Journal of Microwave and Wireless Technologies 06/2014; 6(3-4):225-233. DOI:10.1017/S1759078714000579 · 0.46 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: This work presents a novel InP DHBT-SiGe BiCMOS technology platform by wafer-scale heterogeneous integration. The technology provides vertical stacking of processed InP DHBT wafers directly on top of processed BiCMOS wafer with low-loss ultrabroadband interconnects up to 200 GHz. We demonstrate first MMIC operating up to 300 GHz.
    2013 6th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT); 09/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper describes the design of 220-250-GHz phased-array circuits in 0.13- μm BiCMOS technology. The design aspects of the active and passive devices that are used in the phased-array systems, such as balun, Wilkinson divider, and branch-line coupler, are presented in details. A millimeter-wave vector modulator is designed to support both amplitude and phase control for beam-forming applications. The designed circuits are integrated together to form a four-channel 220-250-GHz phased-array chip. Each channel exhibits 360° phase control with 18 dB of amplitude control. The entire chip draws 167 mA from a 3.3-V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging, radiometry, and communication applications.
    IEEE Transactions on Microwave Theory and Techniques 08/2013; 61(8):3115-3127. DOI:10.1109/TMTT.2013.2258032 · 2.94 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Polarimetric radio wave processing becomes of increasing interest for very high-data rate wireless transmission and for short-range radar at millimeter-waves (mm-W). This goes along with the huge bandwidth of 7 to 9 GHz, which is available worldwide in the 60 GHz unlicensed band. In this paper, we propose a 60 GHz ultra-wideband (UWB) polarimetric multiple-input-multiple-output (MIMO) sensing system architecture and polarimetric signal processing for short-range communications and radar. Demonstration measurements were made by using an UWB radar interface. By measurements in multipath rich environments it is demonstrated that tap-wise polarimetric filtering in delay domain can enhance the 60 GHz link budget by filtering some paths and then reducing shadowing due to human activity. Additionally, optimum MIMO polarimetric filtering is proposed to reduce heavy clutter for mm-W radar, increasing by about 30 dB the signal-to-clutter-plus-noise-ratio.
    IEEE Transactions on Antennas and Propagation 04/2013; 61(4):1631-1641. DOI:10.1109/TAP.2013.2243398 · 2.46 Impact Factor
  • S. Glisic, M. Elkhouly, C. Meliani
    [Show abstract] [Hide abstract]
    ABSTRACT: A fully integrated differential power amplifier, produced in 130 nm SiGe process for 60 GHz application is presented. The PA features one-stage cascade topology with measured gain of 17.5 dB. The measured differential 1dB compression point (P1dB) at the output is 12.7 dBm, and the measured saturated power is 13.3 dBm. Power consumption at P1dB is 57.1 mW. The measured peak power-aided efficiency is 32.9%. To the best knowledge of authors, this is a record value for 60 GHz PAs in SiGe and CMOS.
    Microwave Integrated Circuits Conference (EuMIC), 2013 European; 01/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a doubler-amplifer chain in transferred-substrate InP-HBT technology, integrated on top of the BiCMOS wafer in a wafer-level Benzocyclobutene based bonding process. The VCO operates at 82 GHz with an output power of approximately 8 dBm. The combined circuit delivers 0 dBm at 164 GHz. Measured output power agrees well with simulations. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.
    Microwave Integrated Circuits Conference (EuMIC), 2013 European; 01/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with fT/fmax of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
    Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE; 01/2013
  • European Microwave Week (EuMW 2013); 01/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper describes the specific development of a high-data-rate 57-64-GHz point-to-multipoint wireless local-area network communication system and the worldwide first installation of such a system into an aircraft cabin mock-up. All of the system components, from the RF-chip-set, the low-temperature cofired ceramic integrated antennas, and RF modules to the baseband processor, the medium access control, and the application software were purpose-designed for a wireless backbone for in-cabin communication. The integration aspects of these system components into a passenger aircraft cabin mock-up (ceiling and passenger seat-integration) as well as successful system performance tests were carried out and are reported here.
    IEEE Transactions on Microwave Theory and Techniques 12/2012; 60(12):4209-4219. DOI:10.1109/TMTT.2012.2222914 · 2.94 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper describes the design of D-band phased-array circuits in 0.25 −m technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110–130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of −10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.
    Proc. 7th German Microwave Conf. (GeMiC); 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper reports for the first time on a novel 57–64GHz point-to-multipoint WLAN system, which is installed into an aircraft cabin mock-up. All the system components, from the RF-chip-set, the LTCC-integrated antennas and modules, to the baseband and application software were specifically developed for this application. In addition, the integration of these system components into a passenger aircraft cabin mock-up (ceiling and seat-integration) as well as successful system performance tests were carried out.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.
    International Journal of Microwave and Wireless Technologies 03/2011; 3(02):139 - 145. DOI:10.1017/S1759078711000286 · 0.46 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: A fully integrated transmitter (TX) front-end for wireless communication at 60 GHz, produced in 0.25 μm SiGe:C BiCMOS technology is presented. The transmitter features a modified heterodyne topology with a sliding intermediate frequency (IF). The TX features IF I/Q mixers, an IF amplifier, a 60 GHz mixer, a phase-locked loop, an image-rejection filter and a power amplifier. The measured 1-dB compression point at the output is 12.6 dBm and the saturated power is 16.2 dBm. Error-free data transmission with a 16QAM OFDM signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe without beamforming.
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on; 02/2011
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this work, a 122 GHz transmitter circuit using frequency doublers is realized in 0.13 μm SiGe:C BiCMOS technology with f<sub>T</sub>/f<sub>max</sub> of 250/315 GHz. Two versions of the frequency doubler based on the balanced topology with cascode transistor are implemented. In the basic version, the peak conversion gain was -9 dB with -6 dBm output power. In the improved version the peak conversion gain is improved to -6 dB with -3 dBm peak output power by using open stubs as second harmonic reflectors. A transmitter is realized by combining a VCO working from 59-62 GHz with the basic version of the doubler. The transmitter output power is from -3.5 to -5.5 dBm in the output frequency range of 118-122 GHz.
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on; 02/2011
  • [Show abstract] [Hide abstract]
    ABSTRACT: A four channel 60 GHz beamforming transmitter based on an RF phase shifting architecture is developed fabricated in a SiGe BiCMOS process. The transmitter includes an integrated 48 GHz frequency synthesizer, an up-conversion mixer, and a fully differential millimeter-wave power division and distribution network. Each channel consists of a 2 bit digitally controlled phase shifter and a high power amplifier. The transmitter has approximately 17 dB conversion gain per channel. The maximum saturated RF output power is 15.8 dBm. Each channel dissipates 600 mW.
    Proc. European Microwave Integrated Circuits Conf. (EuMIC); 01/2011
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper presents an integrated 60 GHz sliding-IF receiver fabricated in a 0.25 �m SiGe BiCMOS technology. The receiver chain consists of a front-end and an IF IQ demodulator centered at around 12 GHz. A 48 GHz PLL is used to generate the front-end LO signal and the IF quadrature LO signals. The measured LNA noise figure is around 6.6 dB. Digital words are used to control the VGA gains and IQ mismatches through a Serial Peripheral Interface (SPI) to reduce the number of bond pads. The receiver chip has been mounted onto an application board, where an on-board Vivaldi antenna has already been fabricated. An overall conversion gain of 81 dB has been measured with tuning range larger than 30 dB. In a real in-door environment, error-free transmission with a data-rate of 3.6 Gbit/s has been observed over 15 meters.
  • [Show abstract] [Hide abstract]
    ABSTRACT: A high output 1 dB compression point 60-GHz up-conversion mixer fabricated on 0.25 μm SiGe:C technology is presented. It is based on the Gilbert cell and integrated with LO passive stacked Marchand balun to convert the LO single ended signal into differential. It employs tuned load consisting of spiral inductor and MIM capacitor to match the differential output to 100 ohm and to attenuate the image signal by 15 dB in the middle of the band. The conversion gain is 2.2-dB in 61 GHz and varies within 2 dB over 9 GHz band. We achieve output 1-dB compression point of -3.4 dBm. To the best of our knowledge it is the highest output 1-dB compression point in silicon-based 60-GHz mixers. It consumes 10 mA from 3.3 V supply.
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on; 02/2010
  • [Show abstract] [Hide abstract]
    ABSTRACT: Integrated millimeter-wave 2 bit and 3 bit phase shifters and 4 channel beamforming network are presented in this paper. The 2 bit phase shifter exhibits 4 degrees RMS phase error and a RMS gain error < 1 dB. In the 55-67 GHz range, the 3 bit phase shifter shows RMS phase error < 7 degrees and a RMS gain error < 1 dB. The 4 channel beamforming network consists of four 2 bit RF phase shifter and a fully differential passive power distribution network. Between the 4 channels, the beamforming network exhibits less than 4 degrees and 0.6 dB RMS phase and amplitude mismatch, respectively. The beamforming chip and the phase shifters are fabricated in SiGe BiCMOS technology. The 2 bit and 3 bit phase shifters draws 7 mA and 10 mA respectively from a 3.3 V supply. The circuits are well suited for highly integrated beamforming millimeter-wave transceivers.
    Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM); 01/2010
  • Short-Range Wireless Communications: Emerging Technologies and Applications, 04/2009: pages 185 - 218; , ISBN: 9780470740125