Publications (2)0 Total impact
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Conference Proceeding: Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks
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ABSTRACT: We investigated the influences of gate metals (poly-Si, NiSi, Ni <sub>3</sub>Si) on the time dependent dielectric breakdown (TDDB) reliability of phase-controlled Ni-full-silicide/HfSiON n-FETs. The TDDB reliability of the NiSi-electrode FETs was comparable to that of poly-Si-electrode FETs. However, the reliability was degraded by further Ni-enriching to Ni<sub>3</sub>Si. We presume that the degradation of the base SiO<sub>2</sub> layer is responsible for this. We do not relate the TDDB degradation to Ni diffusion into the insulator, but rather to the strain that is higher in Ni<sub>3</sub>Si samplesReliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International; 04/2006 -
Conference Proceeding: Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation
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ABSTRACT: We have proposed a new method to prepare thin nitrogen-based charge trap layer for scaled-down SONOS with thin EOT (<12nm). Devices employing an ONO prepared by the newly proposed method, a N<sub>2</sub>-plasma treated base oxide topped by an HTO, showed unprecedented V<sub>th</sub> uniformity, carrier localization and good retention characteristics. An overall comparison with Si<sub>3</sub>N <sub>4</sub>-SONOS is given. They also offer excellent transistor characteristics (high on-current and low V<sub>th</sub>), making them ideal for future scaled low-voltage embedded applications with fast readoutNon-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st; 02/2006
Institutions
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2006
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NEC Corporation
Tokyo, Tokyo-to, Japan
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